Nitrogenated amorphous carbon as a semiconductor

Silva, S. Ravi P.; Rafferty, B.; Amaratunga, G.A.J.; Schwan, J.; Franceschini, D. F.; Brown, L. M.

doi:10.1016/0925-9635(95)00446-7

Cited by 53 publications

(28 citation statements)

References 13 publications

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“…For the a-C:H:N films deposited by the PBS at an ion energy of 105 eV, the optical gap first increases and then decreases only at higher N 2 flows beyond 0.5 sccm. Silva et al 32,[34][35][36][37] saw a similar result in their magnetically enhanced plasma deposited a-C:H:N films.…”

Section: B Doped A-c:h Filmssupporting

confidence: 58%

“…15 shows the expected 0.3 eV energy for undoped a-C:H. This could be a result of carriers being thermally activated from the intrinsic Fermi level at mid gap to either of the or * appended states situated Ϯ0.3 eV from the Fermi level. If we now assume that some of the incorporated N in our films create a * N state, situated below the * C state, 36 then it is expected that some localized defects in the a-C:H will be passivated by the addition of N and an additional n-type dopant state is created as a mixed C-N * state. 35 Therefore, any activation energies measured now will result in thermal activation of carriers from the Fermi level to the mixed C-N alloy * conduction band.…”

Section: Discussionmentioning

confidence: 99%

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Nitrogen doping of amorphous carbon thin films

Schwan

Batori

Ulrich

et al. 1998

Journal of Applied Physics

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103

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Nitrogenated and hydrogenated amorphous carbon (a-C:H:N) films have been deposited by a plasma beam source using a gas mixture of C2H2, Ar and N2. The Ar/C2H2 ratio is kept constant at a ratio of 3, with the nitrogen flow allowed to vary. Nonnitrogenated films, with Ar/C2H2 ratios of 3 and 6 were also deposited and analyzed before attempting to identify the modifications to the microstructural properties due to nitrogen doping. The nitrogenated and hydrogenated a-C (a-C:H:N) films deposited in this study reveal interesting properties with regard to their optical gap, electrical conductivity, and mobility of the charge carriers. The optical E04 gap passes through a maximum of 2.7 eV as a function of incorporated nitrogen. The electrical conductivity, too, reaches a peak value of 10−3(Ω cm)−1 with increasing optical gap and remains constant for higher N2 flows. The electrical conductivity process is thermally activated with activation energies in the range 0.1–0.3 eV. This is discussed in terms of the mobility of the charge carriers (determined by Hall measurements) and electronic doping. The defect density (measured by electron spin resonance) is found to decrease with increasing nitrogen incorporation. The films have also been characterized by infrared spectroscopy, photo thermal deflection, and Raman spectroscopy. The microstructure of the deposited a-C:H:N films is discussed in terms of the electronic density of states.

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Section: B Doped A-c:h Filmssupporting

confidence: 58%

Section: Discussionmentioning

confidence: 99%

Nitrogen doping of amorphous carbon thin films

Schwan

Batori

Ulrich

et al. 1998

Journal of Applied Physics

Self Cite

103

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show abstract

“…This is consistent with the previously observed reduction in the electron spin resonance signal with nitrogen incorporation, that is accompanied by a reduction in the compressive stress in the films. [47] Moreover, the sharp peak in the case of a-C films may be attributed to the stress induced localised states [35], which are not observed for a-CN x .…”

Section: Discussionmentioning

confidence: 99%

Probing the band structure of hydrogen-free amorphous carbon and the effect of nitrogen incorporation

Miyajima

Tison

Giusca

et al. 2011

Carbon

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“…Raman spectroscopy is one of the most powerful tools developed for the structural characterization of carbon based materials, such as diamond, carbon nanotube (CNT), fullerene, graphene and graphite etc [1][2][3][4][5][6][7][8]. In particular, it can distinguish the type (multiwall, metal or semiconducting single-wall) of CNTs based on the low-frequency radial breathing modes (RBMs) and the unique profile or line-shape of split G bands.…”

Section: Introductionmentioning

confidence: 99%