2016
DOI: 10.1002/cjce.22726
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Nitroxide‐mediated polymerization of adamantyl‐functional methacrylates for 193 nm photoresists

Abstract: Three different methacrylic monomers (γ‐butyrolactone methacrylate (GBLMA), 3‐hydroxyl‐1‐adamantyl methacrylate (HAMA), and 2‐methyl‐2‐adamantyl methacrylate (MAMA)), that are most often terpolymerized for 193 nm photoresists, were studied individually by nitroxide mediated polymerization (NMP) with succinimidyl ester terminated BlocBuilder (NHS‐BlocBuilder) using a small fraction ∼ 0.05 mol/mol (5 mol%) in the initial mixture of 2,3,4,5,6 pentafluorostyrene (PFS) controlling co‐monomer. The copolymerizations … Show more

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Cited by 5 publications
(5 citation statements)
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“…117 In 2017, Maric et al studied three different methacrylic monomers individually for use as 193 nm photoresists, γbutyrolactone methacrylate (GBLMA), 3-hydroxy-1-adamantyl methacrylate (HAMA), and 2-methyl-2-adamantyl methacrylate (MAMA), by performing NMP with PFS as a controlling monomer, finding that HAMA and MAMA polymerizations were easily controlled, where GBLMA presented more difficulties. 120 Methacrylates have a high equilibrium constant leading to irreversible termination, and therefore, the use of a small amount of controlling monomer, such as PFS or other styrenics, leads to a drop in the average equilibrium constant providing a controlled pseudoliving copolymerization. The information obtained in the previous study was used in the synthesis of GBLMA/HAMA/MAMA random copolymers with small molecular weight distributions via NMP to generate 193 nm argon flouride (ArF) photoresist materials that had relatively low absorbances and good optical transparency.…”
Section: ■ Organic Electronicsmentioning
confidence: 99%
“…117 In 2017, Maric et al studied three different methacrylic monomers individually for use as 193 nm photoresists, γbutyrolactone methacrylate (GBLMA), 3-hydroxy-1-adamantyl methacrylate (HAMA), and 2-methyl-2-adamantyl methacrylate (MAMA), by performing NMP with PFS as a controlling monomer, finding that HAMA and MAMA polymerizations were easily controlled, where GBLMA presented more difficulties. 120 Methacrylates have a high equilibrium constant leading to irreversible termination, and therefore, the use of a small amount of controlling monomer, such as PFS or other styrenics, leads to a drop in the average equilibrium constant providing a controlled pseudoliving copolymerization. The information obtained in the previous study was used in the synthesis of GBLMA/HAMA/MAMA random copolymers with small molecular weight distributions via NMP to generate 193 nm argon flouride (ArF) photoresist materials that had relatively low absorbances and good optical transparency.…”
Section: ■ Organic Electronicsmentioning
confidence: 99%
“…Recently, acrylate-based photoresists consisting of adamantane have been developed [103,[112][113][114][115][116]. Different adamantyl methacrylate materials have been produced and used as a photoresist composition for 193 nm argon fluoride (ArF) lithography [117][118][119][120]. These novel adamantane pendant group-containing photoresists are useful for improving the resolution limits of the feature sizes produced by ArF lithography due to the enhanced sensitivity to 193 nm light and in achieving better etching resistance for producing the finer features.…”
Section: Adamantane and Its Derivativesmentioning
confidence: 99%
“…However, liquid‐state proton NMR successfully characterizes the cellulose nanocrystals’ precursors with carbazole and coumarin functionalities . A liquid‐state proton NMR, quantifies the degree of polymerization and the presence of different co‐polymers in PMMA resins . NMR detects chemical bonds and 1 H spectroscopy detects the hydrogen bond interactions between bisphenol F and an extracting agent in ionic liquids.…”
Section: Applicationsmentioning
confidence: 99%