2011
DOI: 10.1007/s00894-011-1130-4
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NMR and NQR parameters of the SiC-doped on the (4,4) armchair single-walled BPNT: a computational study

Abstract: The structural properties, NMR and NQR parameters in the pristine and silicon carbide (SiC) doped boron phosphide nanotubes (BPNTs) were calculated using DFT methods (BLYP, B3LYP/6-31G) in order to evaluate the influence of SiC-doped on the (4,4) armchair BPNTs. Nuclear magnetic resonance (NMR) parameters including isotropic (CS(I)) and anisotropic (CS(A)) chemical shielding parameters for the sites of various (13)C, (29)Si, (11)B, and (31)P atoms and quadrupole coupling constant (C ( Q )), and asymmetry param… Show more

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Cited by 16 publications
(16 citation statements)
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“…Many investigations have been undertaken to investigate non-carbon-based nanotubes, which exhibit electronic properties independent of these properties. Among them, use of group III and V elements, which are the neighbors of C in the Periodic Table, makes boron nitride (BN) [7], aluminum nitride (AlN) [8], gallium nitride (GaN) [9], indium nitride (InN) [10], boron phosphide (BP) [11], aluminum phosphide (AlP) [12], gallium phosphide (GaP) [13], and indium phosphide (InP) [14] nanotubes an interesting subject of many studies. These nanotubes are inorganic analogs of carbon nanotubes (CNTs) and have good physical properties for a broad variety of applications; these nanotubes are always semiconductors [15].…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…Many investigations have been undertaken to investigate non-carbon-based nanotubes, which exhibit electronic properties independent of these properties. Among them, use of group III and V elements, which are the neighbors of C in the Periodic Table, makes boron nitride (BN) [7], aluminum nitride (AlN) [8], gallium nitride (GaN) [9], indium nitride (InN) [10], boron phosphide (BP) [11], aluminum phosphide (AlP) [12], gallium phosphide (GaP) [13], and indium phosphide (InP) [14] nanotubes an interesting subject of many studies. These nanotubes are inorganic analogs of carbon nanotubes (CNTs) and have good physical properties for a broad variety of applications; these nanotubes are always semiconductors [15].…”
Section: Introductionmentioning
confidence: 99%
“…Also, such nanotubes are being considered as more appropriate materials than CNTs for applications in specific electronic and mechanical devices. However, the properties of nitride compounds have been studied more often than properties of phosphide compounds [7][8][9][10][11][12][13][14][15][16], making it necessary to further study the electronic properties of boron phosphide nanotubes (BPNTs). Nuclear magnetic resonance (NMR) spectroscopy is one of the best techniques to study the electronic structure properties of materials [17,18].…”
Section: Introductionmentioning
confidence: 99%
“…36 To overcome this problem, BSSE has been estimated for the calculated structures by B3LYP in gas phase. This method was used to calculated, the binding energy (BE) of the thiazole-attached (6,0)BNNT model was calculated as follows: 28,29 Moreover, in a previous study, it has been found that the NMR parameters calculated at the B3LYP and B3PW91 levels are in good agreement. 28 Therefore, all of the calculations were done at the B3LYP level.…”
Section: Methodsmentioning
confidence: 99%
“…This method was used to calculated, the binding energy (BE) of the thiazole-attached (6,0)BNNT model was calculated as follows: 28,29 Moreover, in a previous study, it has been found that the NMR parameters calculated at the B3LYP and B3PW91 levels are in good agreement. 28 Therefore, all of the calculations were done at the B3LYP level. The calculated CS tensors in the principal axis system (PAS) with the order of σ 33 > σ 22 > σ 11 37 were converted to measurable NMR parameters, i.e., the isotropic CS (CS I ) and anisotropic CS (CS A ) parameters, using Eqs.…”
Section: Methodsmentioning
confidence: 99%
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