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Photoluminescence and photoconductivity in CdTe crystals doped with Bi

“…These are indirect evidences that photosensitive centers in our Bi doped crystals are similar to the centers introduced by other dopants, which involve the species M Cd ͑with M = Ge, Sn, or Pb͒, 16 supporting the hypothesis that Bi acts as a deep donor occupying Cd position for low Bi concentration. 3͑b͔͒, which correlates with the energy position of the deep levels determined by PICTS.…”

“…This implies that Bi exhibits the same behavior of other dopants which occupy Cd positions and introduce a deep donor level, such as Ge, Sn, and Pb 1,2,16,17 This explanation is in agreement with the result of PICTS measurements showing that the introduction of Bi in the Cd sublattice induces the formation of Cd i defect ͑the level A3͒. This implies that Bi exhibits the same behavior of other dopants which occupy Cd positions and introduce a deep donor level, such as Ge, Sn, and Pb 1,2,16,17 This explanation is in agreement with the result of PICTS measurements showing that the introduction of Bi in the Cd sublattice induces the formation of Cd i defect ͑the level A3͒.…”

“…[8][9][10] Similar conclusions have been drawn also for In and Cl dopants, which introduce shallow donor levels partially compensating the shallow acceptors present in the material. Among others, V, 14 Ti, 15 Ge, 1,16 Sn 16,17 and Pb ͑Ref. 11 Moreover, compensation can be obtained by impurities acting as deep donors.…”

Photoelectric State with Long-Term Relaxation in CdTe:(Ag, Cu, Cd) and Sb<sub>2</sub>Se<sub>3</sub>:Se Photovoltaic Films

“…Recently, in opto-and photoelectronics, considerable attention has been paid to the development of cheap light emitters, photodetectors, ionizing radiation detectors and efficient solar cells with improved optical and photoelectric properties based on solid solutions and heterostructures of cadmium chalcogenides [1] [2] [3] [4]. At the same time, cadmium telluride, which has deep centers with significantly different electron and hole capture cross sections, remains a very attractive object with unique physicochemical properties [5] [6] [7] [8].…”

High temperature electrical properties of CdTe〈Pb〉 crystals under Te saturation

“…Study of CdTe〈Pb〉 crystals with high impurity content in the melt (C ) showed that Pb forms a deep acceptor level E a = E v + 0.43 eV [5,6], which determines the sample equilibrium parameters. The hole concentration ([h + ]) decreased with Pb content ([Pb] s ) increase and was equal to 6 × 10 9 -2 × 10 15 cm -3 at 300 K. The recombination processes were determined by the presence of deep centers with different capture crosssection for holes and electrons [7,8]. Some parameters of these centers were calculated and their struc- -).…”