No‐Heating Deposition of Ferroelectric x%YO1.5–(100−x%)(Hf1−yZry)O2 Films

Mimura, Takanori; Shimura, Reijiro; Tateyama, Akinori; Nakamura, Yoshiko; Shiraishi, Takashi; Funakubo, Hiroshi

doi:10.1002/pssa.202300100

Physica Status Solidi (a)

2023

DOI: 10.1002/pssa.202300100

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No‐Heating Deposition of Ferroelectric x%YO_1.5–(100−x%)(Hf_1−yZr_y)O₂ Films

Takanori Mimura

Reijiro Shimura

Akinori Tateyama

et al.

Abstract: The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/pssa.202300100.

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2024

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Cited by 3 publications

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Atomic Layer Deposition of Epitaxial Ferroelectric Hf_0.5Zr_0.5O₂ Thin Films

Cho,

Song,

Choi

et al. 2024

Adv Funct Materials

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The groundbreaking discovery of unconventional ferroelectricity in HfO2 opens exciting prospects for next‐generation memory devices. However, the practical implementation, particularly its epitaxial stabilization and a clearer understanding of its intrinsic ferroelectricity has been a significant challenge. The study arouses the potential importance of atomic layer deposition (ALD) for mass production in modern industries, demonstrating its proficiency in achieving epitaxial growth of ferroelectric Hf0.5Zr0.5O2 (HZO) thin films on Yttria‐stabilized zirconia (YSZ) substrates. Moreover, with distinct ferroelectric switching currents, the work reveals the ferroelectric characteristics of epitaxial HZO thin films deposited through ALD on YSZ‐buffered Si substrates, which aligns well with CMOS technology. Overall, the results pave the way for a scalable synthesis system for ferroelectric HfO2‐based materials, hinting at a bright future for low‐temperature epitaxial nanoelectronics.

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Atomic Layer Deposition of Epitaxial Ferroelectric Hf_0.5Zr_0.5O₂ Thin Films

Cho,

Song,

Choi

et al. 2024

Adv Funct Materials

View full text Add to dashboard Cite

show abstract

Challenges and recent advances in HfO2-based ferroelectric films for non-volatile memory applications

Shao,

Zhao,

Liu

et al. 2024

Chip

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The ferroelectric and piezoelectric properties of (Hf_1−xCe_x)O₂ films on indium tin oxide/Pt/TiO_x/SiO₂/(100)Si substrates obtained using a no-heating radio-frequency magnetron sputtering deposition method

Chaya,

Okamoto,

Hirai

et al. 2024

Jpn. J. Appl. Phys.

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The effect of composition and film thickness on the ferroelectric and piezoelectric properties of (Hf1-x Ce x )O2 films deposited without substrate heating was investigated. (Hf1-x Ce x )O2 films with various x values (x=0.07–0.27) and thickness (150–880 nm) were deposited via radio-frequency (RF) magnetron sputtering on indium tin oxide (ITO)/Pt/TiO x /SiO2/(100)Si substrates. The crystalline phases of the films were observed by X-ray diffraction. The measurements of electrical properties revealed ferroelectric phases in the x range of 0.11–0.21. The film with x=0.16 exhibited the maximum remanent polarization (P r) of 15 µC/cm2, as well as the highest effective piezoelectric coefficient. In addition, the ferroelectric and structural properties remained almost unchanged with increasing film thickness. Therefore, the no-heating deposition of ferroelectric (Hf1-x Ce x )O2 films and their phase stability with respect to thickness were demonstrated for the first time. This work provides a pathway for the deposition of ferroelectric (Hf1-x Ce x )O2 films on flexible, wearable sensors.

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No‐Heating Deposition of Ferroelectric x%YO_1.5–(100−x%)(Hf_1−yZr_y)O₂ Films

Abstract: The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/pssa.202300100.

Cited by 3 publications

References 32 publications

Atomic Layer Deposition of Epitaxial Ferroelectric Hf_0.5Zr_0.5O₂ Thin Films

Atomic Layer Deposition of Epitaxial Ferroelectric Hf_0.5Zr_0.5O₂ Thin Films

Challenges and recent advances in HfO2-based ferroelectric films for non-volatile memory applications

The ferroelectric and piezoelectric properties of (Hf_1−xCe_x)O₂ films on indium tin oxide/Pt/TiO_x/SiO₂/(100)Si substrates obtained using a no-heating radio-frequency magnetron sputtering deposition method

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No‐Heating Deposition of Ferroelectric x%YO1.5–(100−x%)(Hf1−yZry)O2 Films

Abstract: The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/pssa.202300100.

Cited by 3 publications

References 32 publications

Atomic Layer Deposition of Epitaxial Ferroelectric Hf0.5Zr0.5O2 Thin Films

Atomic Layer Deposition of Epitaxial Ferroelectric Hf0.5Zr0.5O2 Thin Films

Challenges and recent advances in HfO2-based ferroelectric films for non-volatile memory applications

The ferroelectric and piezoelectric properties of (Hf1−x Ce x )O2 films on indium tin oxide/Pt/TiO x /SiO2/(100)Si substrates obtained using a no-heating radio-frequency magnetron sputtering deposition method

Contact Info

Product

Resources

About

No‐Heating Deposition of Ferroelectric x%YO_1.5–(100−x%)(Hf_1−yZr_y)O₂ Films

Atomic Layer Deposition of Epitaxial Ferroelectric Hf_0.5Zr_0.5O₂ Thin Films

Atomic Layer Deposition of Epitaxial Ferroelectric Hf_0.5Zr_0.5O₂ Thin Films

The ferroelectric and piezoelectric properties of (Hf_1−xCe_x)O₂ films on indium tin oxide/Pt/TiO_x/SiO₂/(100)Si substrates obtained using a no-heating radio-frequency magnetron sputtering deposition method