“…Materials such as hexagonal boron nitride, 10 antimonene, 11 phosphorene 12 and silicene 13 have become the focus of the sensing eld, in order to nd candidate materials having the advantages of graphene such as high carrier mobility and strong chemical activity for gas interaction, 14,15 as well as semiconducting properties. In the meanwhile, group III-V nitrides, particularly AlN and InN, 16,17 have been regarded as promising structures for gas sensing, 18,19 and the experimental breakthrough in the synthesis of InN 20 makes it possible to be used as a substitute for graphene with inherent bandgap characteristics. 21 Very recently, 2D transition metal dichalcogenides (TMDs), especially MoS 2 monolayers, [22][23][24] have attracted much attention as alternative materials to conventional metal oxides for chemical sensing devices.…”