Noise characteristics of gallium arsenide field-effect transistors

Statz, H.; Haus, H.A.; Pucel, R.A.

doi:10.1109/t-ed.1974.17966

Cited by 151 publications

(39 citation statements)

References 17 publications

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“…The drain noise conductance (g dn ) and the gate noise conductance (g gn ) are expressed in terms of noise coefficients and admittance parameters as [17][18][19]:…”

Section: Noise Performance Parametersmentioning

confidence: 99%

Gate-to-Drain Capacitance Dependent Model for Noise Performance Evaluation of InAlAs/InGaAs Double-gate HEMT

Bhattacharya¹,

Jogi²,

Gupta³

et al. 2013

JSTS:Journal of Semiconductor Technology and Science

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Abstract-In the present work, the effect of the gateto-drain capacitance (C gd ) on the noise performance of a symmetric tied-gate In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As double-gate HEMT is studied using an accurate charge control based approach. An analytical expression for the gate-to-drain capacitance is obtained. In terms of the intrinsic noise sources and the admittance parameters (Y 11 and Y 21 which are obtained incorporating the effect of C gd ), the various noise performance parameters including the Minimum noise figure and the Minimum Noise Temperature are evaluated. The inclusion of gate-todrain capacitance is observed to cause significant reduction in the Minimum Noise figure and Minimum Noise Temperature especially at low values of drain voltage, thereby, predicting better noise performance for the device.

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“…The drain noise conductance (g dn ) and the gate noise conductance (g gn ) are expressed in terms of noise coefficients and admittance parameters as [17][18][19]:…”

Section: Noise Performance Parametersmentioning

confidence: 99%

Gate-to-Drain Capacitance Dependent Model for Noise Performance Evaluation of InAlAs/InGaAs Double-gate HEMT

Bhattacharya¹,

Jogi²,

Gupta³

et al. 2013

JSTS:Journal of Semiconductor Technology and Science

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“…The equality of the current in the linear (8) and saturation (6b) regions gives the length of linear region as…”

Section: Model Formulationmentioning

confidence: 99%

Analytical noise model of a high‐electron‐mobility transistor for microwave‐frequency application

Guru

Vyas

Gupta

et al. 2004

Micro & Optical Tech Letters

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0.520 nm from 1550.620 to 1550.616 nm. The impact of mode competition at around the 1530-nm range is reduced when utilizing the band-pass filter. Therefore, the efficiency needed to produce more Brillouin Stokes is increased and these Stokes experience higher gain in the cavity. CONCLUSIONThe improvement of the number of Stokes in the Brillouin erbiumfiber laser system, incorporating a band-pass filter, has been reported for the first time. The total output power of Brillouin Stokes improved to 2.3 mW with a 21% increment, as compared to that of the conventional design. The maximum number of 15 Brillouin stokes is obtained in the proposed design, which reflects the efficiency of the band-pass filter to suppress the competing modes in the region of 1530 nm. The flatness of the BEFL output can be increased with the use of the band-pass filter.

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“…The next step is the computation of the dc beha viour of the device. In [3] a two-region transistor model based on the work of Statz et al [4] was used to calculate the characteristics of GaAs MESFETs with doping and low-field mobility profiles in the active layer. Following this approach, we obtain a set of three equations for the calculation of the drain current in the transistor that have to be solved numerically: In (2) -(6) as also in the following expressions all symbols and abbreviations have the same meaning as in [3].…”

Section: Device Modelmentioning

confidence: 99%

“…τ is the sum of the times the electrons need to travel through the regions I and II of the FET and can be calculated as Make use of the expressions obtained as described above for the dc calculations and for the elements of the small-signal equivalent circuit and following the treatment of Statz et al [4] and Pucel et al [5], one can derive analytical ex pressions for the noise sources in the transistor by means of which finally the minimum noise figure F min can be calculated. A detailed treatise of this problem can be found in [6].…”

Section: Device Modelmentioning

confidence: 99%

Unified Simulation Model for Junction‐controlled Field‐effect Transistrors

Schwierz

Nakov

Roßberg

1994

COMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering

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If you would like to write for this, or any other Emerald publication, then please use our Emerald for Authors service information about how to choose which publication to write for and submission guidelines are available for all. Please visit www.emeraldinsight.com/authors for more information. About Emerald www.emeraldinsight.comEmerald is a global publisher linking research and practice to the benefit of society. The company manages a portfolio of more than 290 journals and over 2,350 books and book series volumes, as well as providing an extensive range of online products and additional customer resources and services.Emerald is both COUNTER 4 and TRANSFER compliant. The organization is a partner of the Committee on Publication Ethics (COPE) and also works with Portico and the LOCKSS initiative for digital archive preservation. AbstractAn simple model for the simulation of the electrical behaviour of several types of junction controlled field-effect transistors is proposed. It is based on the calculation of the carrier concentration in the channel by means of a self-consistent solution of Schrödinger and Poisson's equation in the direction perpendicular to the current flow. Based on the carrier concentration the dc, the small-signal, and also the noise properties of the devices may be simulated. The calculated characteristics of a sub-quarter micron gate GaAs MESFET, a δ-doped GaAs FET and a Velocity Modulation Transistor will be presented and discussed.

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Noise characteristics of gallium arsenide field-effect transistors

Cited by 151 publications

References 17 publications

Gate-to-Drain Capacitance Dependent Model for Noise Performance Evaluation of InAlAs/InGaAs Double-gate HEMT

Gate-to-Drain Capacitance Dependent Model for Noise Performance Evaluation of InAlAs/InGaAs Double-gate HEMT

Analytical noise model of a high‐electron‐mobility transistor for microwave‐frequency application

Unified Simulation Model for Junction‐controlled Field‐effect Transistrors

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