Noise characterization of enhancement-mode AlGaN graded barrier MIS-HEMT devices

Mohanbabu, A.; Kumar, R. Saravana; Mohankumar, N.

doi:10.1016/j.spmi.2017.10.020

Cited by 12 publications

(15 citation statements)

References 26 publications

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“…This arrangement offers an enhanced noise figure (1.1 dB), gain (>6.9 dB), and fairly good input and output return losses (8.5 and 9.5 dB, respectively) for the frequency range of 8–11 GHz. Likewise, other groups have found F min values of 0.67–1.25 dB at 10 GHz 13–19 . Therefore, the literature suggests that better high‐frequency noise performance can be conquered through advanced structured design techniques.…”

Section: Introductionmentioning

confidence: 92%

“…However, this noisy network can be replaced by a noiseless 2-port network, one noise voltage source (V n ) and one noise current source (I n ) as shown in Figure 9. The V n and I n are expressed as 19,40 : Frequency (Hz)…”

Section: Noise Characteristicsmentioning

confidence: 99%

“…In this regard, Nalli et al 20 have distinguished a transistor noise model for LNA design through a full‐wave electromagnetic (FW‐EM) simulation of GaN HEMT. Similarly, Mohanbabu et al 19 have investigated the noise performance of E‐mode AlGaN graded barrier MIS‐HEMT using the Sentaurus TCAD tool.…”

Section: Introductionmentioning

confidence: 99%

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Noise performance of back‐barrier engineered GaN‐based trigate HEMT for X‐band applications

Verma,

Nandi

2023

Int J Numerical Modelling

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In this work, a comprehensive investigation on the noise performance of novel optimized back‐barrier engineered GaN based trigate HEMT (BB‐trigate HEMT), have been carried out using Sentaurus TCAD tool. The microwave‐frequency noise of the device has been analyzed using a Green's function approach, assessing the gate and drain noise spectral densities under different bias conditions such as off‐state, subthreshold state and on‐state condition. More importantly, the G‐R noise component in BB‐trigate HEMT is almost eliminated in comparison to conventional trigate HEMT (C‐trigate HEMT). This is due to use of AlGaN back‐barrier layer (BBL). Subsequently, for the first time, it is reported that the noise parameters such as noise resistance and overall noise figure are drastically reduced to ~22 mΩ and ~0.02 dB respectively at 10 GHz frequency for back‐barrier (BB) trigate HEMT having a scaled gate length of 100 nm. The proposed device shows prominent noise performance than conventional trigate HEMT and thereby, it is highly suitable for designing low noise amplifier for X‐band applications.

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Section: Introductionmentioning

confidence: 92%

Section: Noise Characteristicsmentioning

confidence: 99%

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Noise performance of back‐barrier engineered GaN‐based trigate HEMT for X‐band applications

Verma,

Nandi

2023

Int J Numerical Modelling

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“…In recent years, much research has been carried out to develop transistors for use in power system applications with high breakdown voltage and high switching speed but without compromising the device ON resistance while avoiding short-channel effects [1]. The performance enhancement of previously dominant devices such as metal-oxide-semiconductor field-effect transistors (FETs), insulated bipolar transistors, and complementary metal-oxide-semiconductor (CMOS) transistors has reached saturation as per the International Technology Roadmap for Semiconductors (ITRS) [2].…”

Section: Introductionmentioning

confidence: 99%

“…CAVET devices generally operate in depletion mode, but in terms of switching speed and safety, the enhancement mode (E-mode) is a better option for high-power devices [10]. Therefore, techniques such as the cascade CAVET structure [10,11], current blocking layer engineering [10,12], the use of a field plate [6], and recessed gate methods [1] have been adopted in HEMT structures to achieve E-mode operation.…”

Section: Introductionmentioning

confidence: 99%

The impact of a recessed Δ-shaped gate in a vertical CAVET AlGaN/GaN MIS-HEMT for high-power low-loss switching applications

Danielraj¹,

Deb²,

Mohanbabu

et al. 2021

J Comput Electron

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A Δ-shaped gate GaN-based E-mode vertical current-aperture vertical electron transistor (CAVET) device with a borondoped current block layer (B-CBL) on an n + GaN substrate is proposed, designed, and demonstrated herein. Enhancementmode (E-mode) operation is achieved in the proposed device by introducing a 1-μm-thick p-GaN CBL layer into the recessed Δ-shaped gate of the metal-insulator-semiconductor (MIS) high-electron-mobility transistor (HEMT) structure. The device exhibits a threshold voltage of 6.76 V, a drain current saturation of I ds,sat = 3.44 kA/cm 2 , a transconductance of g m = 783.42 S/cm 2 , and an ON/OFF current ratio > 10 10 A/ cm 2 . The breakdown voltage in the OFF-state (V BR,OFF ) shows a maximum of 1590 V and a minimum of 1513 V for a CBL layer thickness (t B-CBL ) of 0.2 and 1 µm at a gate bias of 0 V. The lowest ON-state resistance (R ON ) achieved is 1.24 Ω cm 2 , accompanied by a low gate current of I g,L < 10 -9 and a drain leakage current of I d,L < 10 -8 A/mm. The device exhibits high-frequency performance with peak f t and f max values of 5.12 GHz and 36.8 GHz, respectively, as measured from two-port Y parameters with an Si 3 N 4 thickness (t Si3N4 ) of 40 nm and a recessed penetration depth (t penetration ) of 0.2 µm at V ds = 10 V. Finally, the performance of the vertical CAVET AlGaN/GaN MIS-HEMT power switching device with a boron-doped GaN CBL is analyzed using an ultralow-loss boost converter circuit. The results of the analysis of the demonstrated device indicate that it is a suitable candidate for use in high-power low-loss switching applications.

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E‐Mode‐Operated Advanced III‐V Heterostructure Quantum Well Devices for Analog/RF and High‐Power Switching Applications

Mohanbabu,

Vinodhkumar,

Maheswari

et al. 2023

Nanodevices for Integrated Circuit Design

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Noise characterization of enhancement-mode AlGaN graded barrier MIS-HEMT devices

Cited by 12 publications

References 26 publications

Noise performance of back‐barrier engineered GaN‐based trigate HEMT for X‐band applications

Noise performance of back‐barrier engineered GaN‐based trigate HEMT for X‐band applications

The impact of a recessed Δ-shaped gate in a vertical CAVET AlGaN/GaN MIS-HEMT for high-power low-loss switching applications

E‐Mode‐Operated Advanced III‐V Heterostructure Quantum Well Devices for Analog/RF and High‐Power Switching Applications

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