Noise coupling between through-silicon vias and active devices for 20/14-nm technology nodes

Abstract

Although a through-silicon via (TSV) is widely used in three-dimensional integrated circuit systems, one of its major design challenges is noise coupling between TSVs and active devices. This paper investigates noise coupling between TSVs and active devices for 20/14-nm technology nodes. The effect of variations of structural parameters on noise coupling was examined using a three-dimensional full-wave electromagnetic field solver and its result was explained. Additionally, transient analysis on coupling noise was conducted with Synopsys TCAD. Furthermore, a combined strategy employing doped signal TSVs and ‘bare’ ground TSVs was proposed and compared with conventional signal/ground schemes. Demonstrated to improve noise isolation effectively, the proposed strategy is inherently advantageous to circuits of advanced technology nodes compared with other noise isolation schemes, for it demands no modification of the original circuit design, placement and routing.

Wireless Closed-Loop Optical Regulation System for Seizure Detection and Suppression In Vivo

“…The separation of MEA and LED probes in space distance and heavily doped silicon substrate can significantly reduce crosstalk. According to published studies (Fang et al, 2015;Kim et al, 2020;Wang et al, 2021), there are two sources of noise: first, when the wireless energy supply system works, it will introduce electromagnetic interference by supplying power to the LED probe through electromagnetic induction; second, when the LED probe is turned on and illuminated on the silicon substrate, it will produce the photovoltaic effect. The MEA used in the experiment was prepared on a heavily doped silicon substrate, which suppressed noise to a large extent (Wei et al, 2020).…”

Importance of low power electronic circuit design and its impact on energy consumption

“…Today, due to the growing demand of users for devices with high processing speed, there is a need for technologies that can operate at high frequency. In other words, it is predicted that high clock speed will be needed in the future [10] . These technologies suffer from high leakage currents.…”

“…Therefore, the use of them leads to a dramatic increase in static power loss. Moreover, with the development of technology, the supply voltage has decreased [10] , but the threshold voltage has not changed much.…”