Noise due to generation and recombination of carriers in p-n junction transition regions

Lauritzen, P.O.

doi:10.1109/t-ed.1968.16513

Cited by 80 publications

(22 citation statements)

References 9 publications

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“…Thus, assuming Markovian nature of the emission process, a single isolated Coulomb center simply leads to shot noise ͑i.e., white noise͒. 29 In other words, the present excessive low frequency noise cannot be generated from a single isolated Coulomb center. Since the Poole-Frenkel effect is the prime function behind the leakage, the principal factor determining the current is the electric field.…”

Section: A Spatial Proximity Between Oxide Precipitate and Coulomb Cmentioning

confidence: 95%

An interface state mediated junction leakage mechanism induced by a single polyhedral oxide precipitate in silicon diode

Tsuchiaki

Fujimori

Iinuma

et al. 1999

Journal of Applied Physics

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The impact of an oxide precipitate on the junction leakage of a silicon p/n diode was investigated. A 70–100 nm diam single polyhedral oxide precipitate was placed in the depletion region of a p+/n junction by hydrogen annealing and polishing a Czochralski grown silicon wafer. In the reverse-bias current–voltage (I–V) curve, an anomalous hump structure was observed. This excess leakage component exhibited a flicker-type low frequency noise. Functional decomposition of the I–V curves demonstrated that a single gap state regulates the leakage current and that two distinct physical processes are involved in the leakage mechanism. The temperature and electric field dependence of the processes revealed that the gap state was a shallow attractive Coulomb center and that electric carriers were supplied to the Coulomb center by phonon-assisted tunneling and emitted from the center by the Poole–Frenkel mechanism. The presence of excessive low frequency noise indicated spatial proximity between the Coulomb center and the oxide precipitate. Computer simulations of the electric field around the oxide precipitate suggested that the center is doubly charged. Based on these findings, a leakage model was proposed. In the vicinity of the oxide precipitate, a few interstitial oxygen atoms are thought to be clustered to form a shallow double donor. The electric field facilitates the hopping of electrons from the valence band into the oxygen donor via interface states on the exterior of the oxide precipitate. Electrons are then emitted onto the conduction band by the Poole–Frenkel mechanism. Charge state transitions of traps inside the oxide precipitate generate a low frequency electric field fluctuation. The field fluctuation is then amplified by the Poole–Frenkel mechanism into the excessive low frequency noise in the leakage current. Thus a clear case of the detrimental impact of a shallow Coulomb center associated with an extended defect is established.

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Section: A Spatial Proximity Between Oxide Precipitate and Coulomb Cmentioning

confidence: 95%

An interface state mediated junction leakage mechanism induced by a single polyhedral oxide precipitate in silicon diode

Tsuchiaki

Fujimori

Iinuma

et al. 1999

Journal of Applied Physics

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“…13. 13, the duration of these pulses, t s , is about t s ϳ W SCR / v s , where W SCR is the width of SCR and v s Ϸ 10 7 cm/ s is the saturated carrier velocity. 13 was associated with current pulses, which appear as a result of random capture and emission of electrons and holes by the same level in the forbidden gap, which is responsible for the recombination current through p-n junction.…”

Section: A the Statement Of The Problem: Qualitative Analysismentioning

confidence: 99%

Generation-recombination noise in forward biased 4H-SiC p-n diodes

Rumyantsev

Дмитриев

Levinshteǐn

et al. 2006

Journal of Applied Physics

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“…The purposely devised method is based on Monte Carlo simulations of the generationrecombination process, where traps are considered independent, as assumed in Ref. 9. We want to point out anyway the fact that our method is general and can be easily extended to the case of interacting traps.…”

Section: Monte Carlo Simulations and Measurement Resultsmentioning

confidence: 99%

“…Shot noise suppression does not occur only in lowdimensional structures, but also in p − n junctions when a large contribution to the current comes from charge generationrecombination (g-r) in the depletion region, as demonstrated theoretically [9][10][11] and experimentally 12,13 since a long time ago. As in the shot noise suppression in double-barrier resonant tunneling devices, correlation between carriers is introduced by the fact that there are states (trap states in this case, well states in DBRTDs), the occupancy of which regulates the carrier flux.…”

Section: Introductionmentioning

confidence: 90%

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Shot noise suppression inp−njunctions due to carrier generation-recombination

et al. 2011

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We present a theoretical and experimental investigation of shot noise suppression in gallium arsenide and silicon p − n junctions due the to effect of generation-recombination phenomena. In particular, the availability of the cross-correlation technique and of ultra-low-noise amplifiers has allowed us to significantly extend, down to 10 pA, the range of bias current values for which results were available in the literature. To provide a quantitative understanding of the observed V -shape noise behavior, we have extended the Shockley-Read-Hall model for the trap-assisted generation-recombination mechanism. Such a model has represented the theoretical background for the performed Monte Carlo noise simulations, which have provided good agreement with the experimental results.

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Noise due to generation and recombination of carriers in p-n junction transition regions

Cited by 80 publications

References 9 publications

An interface state mediated junction leakage mechanism induced by a single polyhedral oxide precipitate in silicon diode

An interface state mediated junction leakage mechanism induced by a single polyhedral oxide precipitate in silicon diode

Generation-recombination noise in forward biased 4H-SiC p-n diodes

Shot noise suppression inp−njunctions due to carrier generation-recombination

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