Noise in 6H-SiC ion implanted p–n diodes: Effect of the active area on the noise properties of these junctions

Ouacha, H.; Willander, Magnus; Wahab, Q.; Ouacha, A.; Holmén, G.

doi:10.1063/1.370161

Cited by 5 publications

(1 citation statement)

References 23 publications

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“…The noise-current dependence is found to be S I (10 Hz) ∝ I 1.9 , I 2.1 for D (CS) and D (TR), respectively. This dependence can be compared to the noise-current dependence of I 1.9 , I 2.40 for Ir/p-Si 0.86 Ge 0.14 as an annealed Schottky junction and 6H-SiC ion implanted p-n diode, respectively [9,10]. In our case, S I (f ) can be described by the following relation in the considered frequency range…”

Section: Resultsmentioning

confidence: 91%

Comparison between the noise properties of PtSi/p-Si_1-xGe_xand Pt/p-Si_1-xGe_xSchottky contacts prepared by co-sputtering and thermal reaction

Ouacha

Nur

et al. 2001

Semicond. Sci. Technol.

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The noise properties of Pt/p-Si 1−x Ge x and PtSi/p-Si 1−x Ge x (x = 0.14) Schottky contacts have been studied. The silicide layer PtSi was formed by thermal reaction (TR) of Pt with a silicon substrate and by co-sputtering (CS) of Pt and Si onto the strained Si 1−x Ge x layer. The noise measurements were performed at temperature T = 77 K over the frequency range 10-10 4 Hz. Higher noise level was observed in the annealed diode Pt/p-Si 1−x Ge x . In both diodes, the noise was found to exhibit 1/f behaviour and was attributed to fluctuations of the generation-recombination current at the interface states. The results reveal significant reductions in the total noise by 70%, and the interface state density N it by three orders of magnitude when the silicide is formed by the CS process.

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Section: Resultsmentioning

confidence: 91%

Comparison between the noise properties of PtSi/p-Si_1-xGe_xand Pt/p-Si_1-xGe_xSchottky contacts prepared by co-sputtering and thermal reaction

Ouacha

Nur

et al. 2001

Semicond. Sci. Technol.

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Characterization of SnTe-doped InP grown by solid-source atomic layer molecular beam epitaxy

Postigo¹,

Dotor²,

Garcia³

et al. 2001

Journal of Applied Physics

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SnTe-doped InP layers were grown at low temperature by solid-source atomic layer molecular beam epitaxy. The samples were characterized by Hall measurements versus temperature, low temperature photoluminescence, x-ray diffraction, and secondary ion mass spectroscopy. The temperature of the SnTe effusion cell was varied from 320 to 440 °C, and the free electron concentration measured at room temperature ranged between 2.0×1016 cm−3 and 5.6×1018 cm−3 with the corresponding Hall mobility varying from 2320 to 1042 cm2/V s.

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Generation-recombination noise in forward biased 4H-SiC p-n diodes

Rumyantsev

Дмитриев

Levinshteǐn

et al. 2006

Journal of Applied Physics

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Noise in 6H-SiC ion implanted p–n diodes: Effect of the active area on the noise properties of these junctions

Abstract: High-energy (MeV) Al and B ion implantations into 4H-SiC and fabrication of pin diodes

Cited by 5 publications

References 23 publications

Comparison between the noise properties of PtSi/p-Si_1-xGe_xand Pt/p-Si_1-xGe_xSchottky contacts prepared by co-sputtering and thermal reaction

Comparison between the noise properties of PtSi/p-Si_1-xGe_xand Pt/p-Si_1-xGe_xSchottky contacts prepared by co-sputtering and thermal reaction

Characterization of SnTe-doped InP grown by solid-source atomic layer molecular beam epitaxy

Generation-recombination noise in forward biased 4H-SiC p-n diodes

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Noise in 6H-SiC ion implanted p–n diodes: Effect of the active area on the noise properties of these junctions

Abstract: High-energy (MeV) Al and B ion implantations into 4H-SiC and fabrication of pin diodes

Cited by 5 publications

References 23 publications

Comparison between the noise properties of PtSi/p-Si1-xGexand Pt/p-Si1-xGexSchottky contacts prepared by co-sputtering and thermal reaction

Comparison between the noise properties of PtSi/p-Si1-xGexand Pt/p-Si1-xGexSchottky contacts prepared by co-sputtering and thermal reaction

Characterization of SnTe-doped InP grown by solid-source atomic layer molecular beam epitaxy

Generation-recombination noise in forward biased 4H-SiC p-n diodes

Contact Info

Product

Resources

About

Comparison between the noise properties of PtSi/p-Si_1-xGe_xand Pt/p-Si_1-xGe_xSchottky contacts prepared by co-sputtering and thermal reaction

Comparison between the noise properties of PtSi/p-Si_1-xGe_xand Pt/p-Si_1-xGe_xSchottky contacts prepared by co-sputtering and thermal reaction