Noise in Semiconductor Devices

In Situ Growth of Leakage-Free Direct-Bridging GaN Nanowires: Application to Gas Sensors for Long-Term Stability, Low Power Consumption, and Sub-ppb Detection Limit

“…However, from another point of view, low resistance is preferred because both the Flicker noise and thermal noise can decrease with decreasing resistance. 69,70 Moreover, due to the robust solid connection in the bridging NWs, the contact resistance can be minimized, also contributing to the low noise. 30 Thus, in fact, the detection limit was not degraded by the low sensitivity.…”

“…It should be mentioned that for our NW, the sensitivity ( S = Δ R / R , the relative change in NW resistance) is not very high due to the low NW resistance (i.e., high carrier density n 0 ), because the sensitivity ( S = Δ R / R = Δ n / n 0 ) is inversely proportional to the native carrier density ( n 0 ). However, from another point of view, low resistance is preferred because both the Flicker noise and thermal noise can decrease with decreasing resistance. , Moreover, due to the robust solid connection in the bridging NWs, the contact resistance can be minimized, also contributing to the low noise . Thus, in fact, the detection limit was not degraded by the low sensitivity.…”

Recombination noise in semiconductor junction devices

“…Early theoretical treatments of terminal current shot noise generated in semiconductor junctions in the mid 1950s [1][2][3][4][5] initially attributed its origin to the random transport of charge carriers across the depletion layer. This was a natural conception because of the apparent similarity of the situation in the depletion layer to that in a temperature limited vacuum diode to which Schottky's analysis of 1918 presumably applied [38].…”

“…The flux of minority carriers, which constitutes the backward current, comprises all those electrons incident on the junction from the p-side. The existence of these large counterflowing charge carrier fluxes was noted by Chenette in his 1967 review [4], who recognised that they had no external effect on the low-frequency noise and by Robinson in his 1974 monograph [8], who emphasised their physical significance. Buckingham [7] introduced a differential depletion layer resistance…”

“…The noise generators used in the noise equivalent circuits were required only to reproduce the current and voltage noise external to the device. One of the consequences of this was that early diode and transistor noise models [1][2][3][4][5] did not have as firm a physical basis as is now possible. In fact, as subsequently pointed out by Buckingham, Faulkner and Robinson [6][7][8], early shot noise models were inconsistent with the Shockley model of the bipolar junction, despite their success in predicting external current noise.…”