Noise in solid-state devices and lasers

Ziel, A. van der

doi:10.1109/proc.1970.7896

Cited by 225 publications

(97 citation statements)

References 143 publications

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“…2 and 3). This type of noise is characteristic for the many semiconductor devices (Jones, 1994;Mohammadi & Pavlidis, 2000;Palenskis, 1990;Vandamme, 1994;Van der Ziel, 1970;). Origin of it in semiconductor devices usually is superposition of many charge carriers generation-recombination (GR) processes through GR and capture centres with widely distributed relaxation times (Jones, 1994;Palenskis, 1990).…”

Section: Low Frequency Noise Characteristics Of Multi-quantum-well Lamentioning

confidence: 96%

“…In (Jacobsen, 2010;Tsuchida, 2011), it was shown, that linewidth of the semiconductor laser strongly depends on the level of 1/f α -type noise. In (Mohammadi & Pavlidis, 2000;Palenskis, 1990; Van der Ziel, 1970), it is shown that only the superposition of generation-recombination processes through the recombination centres in macroscopic defects with a wide relaxation time distribution can explain the 1/f α -type noise spectra occurring over a wide frequency range. In (Orsal et al, 1994;Simmons & Sobiestianskas, 2005), there were shown, that lowfrequency terminal electrical noise is highly correlated to the optical noise and that the electrical noise measurement could be used for in situ noise characterization of laser diodes without any optics and accompanying elements.…”

Section: Introductionmentioning

confidence: 99%

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Low Frequency Noise Characteristics of Multimode and Singlemode Laser Diodes

Pralgauskaitee¹,

Palenskis²,

Matukas³

2012

Semiconductor Laser Diode Technology and Applications

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Section: Low Frequency Noise Characteristics Of Multi-quantum-well Lamentioning

confidence: 96%

Section: Introductionmentioning

confidence: 99%

Low Frequency Noise Characteristics of Multimode and Singlemode Laser Diodes

Pralgauskaitee¹,

Palenskis²,

Matukas³

2012

Semiconductor Laser Diode Technology and Applications

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“…It is worth recalling that the network is an imperfect integrator, which makes this case pretty similar to the previous one. Again the fictitious white noise consists of a Poisson sequence of pulses occurring at an arbitrary rate , each of which has random sign and area given by (5), or (11) Each of such pulses gets "integrated" by the RC network and appears at its output in the form (12) being the arrival time of the corresponding pulse. So, our model of the Lorentzian noise consists of a sequence of core pulses occurring Poissonianly at times with an average rate , as also sketched in Fig.…”

Section: Theoretical Backgroundmentioning

confidence: 99%

“…Namely, (15) (16) where is the Boltzmann constant, is absolute temperature. For an input FET where is its transconductance and is a constant factor 2/3 [11], and for an input BJT where is the base spreading resistor. is the sum of the detector leakage current and the input transistor bias current (the latter is typically negligible for an FET cooled to cryogenic temperatures), is the feedback resistor.…”

Section: Input Noise Core Pulsesmentioning

confidence: 99%

Time-domain Simulation of electronic noises

Pullia

Riboldi

2004

IEEE Trans. Nucl. Sci.

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Abstract-In this paper, a procedure is proposed to computer simulate the electronic noise of ionizing-radiation spectrometers. The viewpoint of the simulator is the output of the preamplifier, with or without an anti-aliasing filter, just in front of the ADC. Examples are given for the case of segmented high purity Germanium detectors (HPGe). The method makes use of the fractional calculus basics. A software procedure provides the noisy waveform as a function of the fundamental electrical-physical parameters of the system, including: detector capacitance, detector leakage current, feedback resistor, 1 -noise coefficient of the input transistor, temperature of the preamplifier input devices.o The ADC quantization noise is also included in the simulation.

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“…Some of the main contributors to LF noise in Schottky diodes are [11]: Flicker noise: related to generation-recombination in surface states [12]. It is described by (1), where I is the dc current and the other parameters are device dependent (a f ,…”

Section: Introductionmentioning

confidence: 99%

Noise conversion of Schottky diodes in mm-wave detectors under different nonlinear regimes: modeling and simulation versus measurement

Gutiérrez

Zeljami

Villa

et al. 2015

Int. J. Microw. Wireless Technol.

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Noise conversion of Schottky diodes in mm-wave detectors under different nonlinear regimes: modeling and simulation versus measurement je ' ssica gutie ' rrez, kaoutar zeljami, enrique villa, beatriz aja, maria luisa de la fuente, sergio sancho and juan pablo pascual This paper presents and discusses several methods for predicting the low-frequency (LF) noise at the output of a mm-wave detector. These methods are based on the extraction of LF noise source parameters from the single diode under a specific set of bias conditions and the transfer or conversion of these noise sources, under different operating conditions including cyclostationary regime, to the quasi-dc output of a mm-wave detector constructed with the same model of diode. The noise analysis is based on a conversion-matrix type formulation, which relates the carrier noisy sidebands of the input signal with the detector output spectrum through a pair of transfer functions obtained in commercial software. Measurements of detectors in individual and differential setups will be presented and compared with predictions. I . I N T R O D U C T I O NThe low-frequency (LF) noise at the output of a detector may contribute to increasing system instability, becoming a source of error, for example in the operation of radiometers. Particularly, to establish appropriate switching frequencies in switched radiometer systems, it is especially relevant to know the knee frequency of devices [1]. The presence of a switching frequency in these systems transforms the noise analysis into a cyclostationary problem. Moreover, the system's knee frequency may vary depending on the operation mode of the devices. Rigorous mathematical treatment of several types of deterministic and random signals flowing through a nonlinearity is a classic topic [2], which should be reconsidered as simulation tools evolve and the requirements of systems become stricter. On the other hand, in general, apart from phase noise (PHN) in oscillators, simulation tool studies have paid limited attention to LF noise. Therefore, it is considered of great interest to have an accurate characterization of devices' LF noise together with reliable simulation tools for predicting its conversion to the system output, depending on the device operation regimes.The relevance of the device operation regime is shown in [3], which provides empirical evidence of the shot noise deviation with respect to the conventional model in a large-signal pumped Schottky diode, proposing an alternative model based, not on the mean current of the device, but on the smallsignal resistance, supported by a classic reference [4] and in agreement with the distinction between shot noise with constant and with time-varying rate presented in [5]. In [6], the simulation of cyclostationary noise is treated from a physically-based point of view. In [7], the use of time-domain and transient-envelope tools is proposed for the simulation of switching radiometer systems handling noisy broadband signals. Nevertheless, the frequency domain is usuall...

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Noise in solid-state devices and lasers

Cited by 225 publications

References 143 publications

Low Frequency Noise Characteristics of Multimode and Singlemode Laser Diodes

Low Frequency Noise Characteristics of Multimode and Singlemode Laser Diodes

Time-domain Simulation of electronic noises

Noise conversion of Schottky diodes in mm-wave detectors under different nonlinear regimes: modeling and simulation versus measurement

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