Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/<i>ƒ</i>) noise

Kirton, M. J.; Uren, Michael J.

doi:10.1080/00018738900101122

Cited by 1,206 publications

(741 citation statements)

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“…some surely arise from conformational changes and steric effects.) Rectangular currents are known to arise when ions jump onto binding sites in insulating regions of field effect transistors (Kirton & Uren, 1989) and similar currents occur in ‗Coulomb blockade' (Grabert & Devoret, 1992). If a tiny (0.1%) time independent conformation change is put into a time dependent version of the PNP equations, currents are computed that turn on and off as channel currents do (Gardner, Jerome & Eisenberg, 1998).…”

Section: Brief History Of Diffusion Theory Of Chemical Reactions Thementioning

confidence: 99%

From Structure to Function in Open Ionic Channels

Eisenberg

1999

Journal of Membrane Biology

159

131

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We consider a simple working hypothesis that all permeation properties of open ionic channels can be predicted by understanding electrodiffusion in fixed structures, without invoking conformation changes, or changes in chemical bonds. We know, of course, that ions can bind to specific protein structures, and that this binding is not easily described by the traditional electrostatic equations of physics textbooks, that describe average electric fields, the so-called `mean field'. The question is which specific properties can be explained just by mean field electrostatics and which cannot. I believe the best way to uncover the specific chemical properties of channels is to invoke them as little as possible, seeking to explain with mean field electrostatics first. Then, when phenomena appear that cannot be described that way, by the mean field alone, we turn to chemically specific explanations, seeking the appropriate tools (of electrochemistry, Langevin, or molecular dynamics, for example) to understand them. In this spirit, we turn now to the structure of open ionic channels, apply the laws of electrodiffusion to them, and see how many of their properties we can predict just that way.Comment: Nearly final version of publicatio

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Section: Brief History Of Diffusion Theory Of Chemical Reactions Thementioning

confidence: 99%

From Structure to Function in Open Ionic Channels

Eisenberg

1999

Journal of Membrane Biology

159

131

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“…Power spectrum current noise in MOSFETs at low frequency follows the 1/f law, meaning that the noise spectrum is inversely proportional to frequency f on a logarithm scale. The 1/f noise is generally interpreted as the superposition of random events of charge trapping and de-trapping from defects randomly distributed in the gate oxide (for example, SiO 2 ) near the semiconductor channel (for example, Si) 2,3 (Fig. 1a).…”

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confidence: 99%

One-by-one trap activation in silicon nanowire transistors

et al. 2010

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Flicker or 1/f noise in metal-oxide-semiconductor field-effect transistors (mosFETs) has been identified as the main source of noise at low frequency. It often originates from an ensemble of a huge number of charges becoming trapped and de-trapped. However, as a deviation from the well-known model of 1/f noise is observed for nanoscale mosFETs, a new model is required. Here, we report the observation of one-by-one trap activation controlled by the gate voltage in a nanowire mosFET and propose a new low-frequency-noise theory for nanoscale FETs. We show that the Coulomb repulsion between electronically charged trap sites prevents the activation of several traps simultaneously. This effect induces a noise reduction of more than one order of magnitude. It decreases when the electron density in the channel is increased due to the electrical screening of traps. These findings are technologically useful for any FET with a short and narrow channel.

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“…Fabricating CMOS devices in SOI presents challenges in device design and process integration, as well as in the process simulation, device simulation and circuit simulation TCAD tools. For [81,17,65] example, dopant diffusion in the thin silicon layer over the BOX is dramatically altered in SOI by interaction of the diffusing dopants with the silicon/BOX interface (at the top of the BOX) [104,46,66]. This and other differences must be comprehended in process simulations and in process integration for IC fabrication.…”

Section: Soi Challenges and Issuesmentioning

confidence: 99%