Noise performance of a 94-GHz Gunn-effect local oscillator

Tully, J.W.; Weller, K.P.; Benko, E.

doi:10.1109/t-ed.1978.19035

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Results Of the Metal Diffusion Studies1

Fig 2 Effect Of W In Improving Lp In Vpe N-gaas1

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1979

1989

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Cited by 4 publications

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“…No gross interdiffusion between W and GaAs is observed by Rutherford backscattering, with a depth resolution of 150A, after annealing at 500~ (11). Tungsten is also stable against Au and Pt, and therefore is beginning to find use in contact systems where long term reliability at elevated temperature is re- quired (12)(13)(14). In the present work, a well-defined increase in Lp under a W stripe was observed after heating at 600~ for 5 rain (Fig.…”

Section: Results Of the Metal Diffusion Studiesmentioning

confidence: 99%

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Hole Diffusion Lengths in VPE GaAs and GaAs0.6 P 0.4 Treated with Transition Metals

Partin

Milnes

Vassamillet

1979

J. Electrochem. Soc.

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The effects of several metals on L, in GaAs and GaAs0.6Po.4 have been evaluated. Diffusion of Co at 700~ for 5 rain into VPE n-GaAs0.6Po.4 is found to produce a considerable reduction of Lp. Lesser degradation is caused by Ni, whereas Cu, Cd, and Zn improve L,. In VPE n-GaAs, diffusions of Co, Cu, W, and Cd improve Lp. These improvements are believed to be caused by gettering of lifetime killing deep impurities, such as Co and Ni, by shallow diffused junctions. The metals that degrade LD appear to be ones with small tetrahedral covalent radii.

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Section: Results Of the Metal Diffusion Studiesmentioning

confidence: 99%

“…quired (12)(13)(14). In the present work, a well-defined increase in Lp under a W stripe was observed after heating at 600~ for 5 rain (Fig.…”

Section: Fig 2 Effect Of W In Improving Lp In Vpe N-gaasmentioning

confidence: 99%