Noise performance of the radio-frequency single-electron transistor

Roschier, Leif; Hakonen, Pertti; Bladh, K.; Delsing, Per; Lehnert, K. W.; Spietz, Lafe; Schoelkopf, R. J.

doi:10.1063/1.1635972

Cited by 52 publications

(53 citation statements)

References 25 publications

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“…Note that our scheme differs from the commonly used read-out of radio-frequency quantum point contacts and single elec-tron transistors. In contrast to these device, where the response is mostly due to a change in device resistance 24 , our gate has a practically infinite resistance.…”

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confidence: 99%

Radio-frequency dispersive detection of donor atoms in a field-effect transistor

2014

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Radio-frequency dispersive read-out can provide a useful probe to nano-scale structures such as nano-wire devices, especially when the implementation of charge sensing is not straightforward. Here we demonstrate dispersive 'gate-only' read-out of phosphor donors in a silicon nano-scale transistor. The technique enables access to states that are only tunnel-coupled to one contact, which is not easily achievable by other methods. This allows us to locate individual randomly placed donors in the device channel. Furthermore, the setup is naturally compatible with high bandwidth access to the probed donor states and may aid the implementation of a qubit based on coupled donors.

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confidence: 99%

Radio-frequency dispersive detection of donor atoms in a field-effect transistor

2014

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“…4,5 In practice, its sensitivity is limited by the noise of the following amplifier. 6 In the near future when this noise will probably be reduced from a few Kelvin to ϳ100 mK (Ref. 7) the charge sensitivity will be set by the shot noise of the tunneling electrons through the single-electron transistor.…”

Section: ͑5͒mentioning

confidence: 99%

“…By using the Dicke radiometer formula 11 for the fractional error of the noise measurement ⌬T / ͑T N + T S ͒ϳ1/ ͱ B , where is the measurement time and B the measurement bandwidth, it follows that with ϳ 1 s and B ϳ 10 8 Hz the signal power of 100 K may be measured if the amplifier noise temperature T N is of the order of 1 K. The practical problem is that T N depends, in general, considerably on the impedance of the measured source. 6,12 In order to extract the shot noise contribution from the total measured noise, it would be necessary to know the four noise parameters of the amplifier 12,13 and their effect to the measured total noise with an accuracy of 100 ppm. This is almost impossible in practice.…”

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confidence: 99%

Cyclostationary shot noise in mesoscopic measurements

Roschier¹,

Heikkilä²,

Hakonen³

2004

Journal of Applied Physics

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We discuss theoretically a setup where a time-dependent current consisting of a DC bias and two sinusoidal harmonics is driven through a sample. If the sample exhibits current-dependent shot noise, the down-converted noise power spectrum varies depending on the local-oscillator phase of the mixer. The theory of this phase-dependent noise is applied to discuss the measurement of the radio-frequency single-electron transistor. We also show that this effect can be used to measure the shot noise accurately even in nonlinear high-impedance samples.Comment: 3 pages, 2 figure

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“…Theoretically, this is achieved by making the channel resistance R C as close as possible to L/C S Z 0 , where Z 0 is the characteristic impedance of the RF electronics (Z 0 ¼ 50 X). 5,16,17 Figure 2(c) shows the change in S11 at f reso when R C is changed by tuning the UG voltage V UG . When R C is reduced and thus becomes closer to L/ C S Z 0 , the dip in S11 becomes deeper, as expected.…”

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Wide-bandwidth charge sensitivity with a radio-frequency field-effect transistor

Nishiguchi

Yamaguchi

Fujiwara

et al. 2013

Applied Physics Letters

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We demonstrate high-speed charge detection at room temperature with single-electron resolution by using a radio-frequency field-effect transistor (RF-FET). The RF-FET combines a nanometerscale silicon FET with an impedance-matching circuit composed of an inductor and capacitor. Driving the RF-FET with a carrier signal at its resonance frequency, small signals at the transistor's gate modulate the impedance of the resonant circuit, which is monitored at high speed using the reflected signal. The RF-FET driven by high-power carrier signals enables a charge sensitivity of 2 Â 10 À4 e/Hz 0.5 at a readout bandwidth of 20 MHz. V C 2013 AIP Publishing LLC.[http://dx.doi.org/10.1063/1.4822430]Charge sensors based on a nanometer-sale transistor have been widely studied to detect extremely small signals, 1 such as image charges from DNA, 2 single-electron chargecoupled devices, 3 and mechanical motion. 4 One of the major breakthroughs in charge sensors was the development of the radio-frequency single-electron transistor (RF-SET). By using an impedance matching circuit, the RF-SET achieved both extremely high charge sensitivity and a wide bandwidth (1.2 Â 10 À5 e/Hz 0.5 at 1.1 MHz). 5 Because of this unique combination, the RF-SET also has stimulated fundamental research on single-electron transport via a quantum dot for quantum information processing. 6-8 The RF-SET offers three advantages for charge detection: (i) a single-electron transistor with high charge sensitivity due to Coulombblockade transport via a tiny island, 1 (ii) a reflectometry technique by connecting the SET to an impedance matching circuit composed of an inductor expands the readout bandwidth, and (iii) substantial reduction of low-frequency flicker noise due to the high operating frequency. However, in practice, the RF-SET is limited to use in only cryogenic sensing applications due to its reliance on Coulomb blockade. Silicon SETs with large charging energy can increase the working operating temperature; however, it is still in practice limited to less than 13 K. 9 The idea of the RF-SET has in recent years also been extended to charge sensors based on quantum point contacts (QPCs) in the form of the RF-QPC: 10 however, like the RF-SET, the RF-QPC also requires cryogenic temperatures.Silicon field-effect transistors (FETs) with nanometerscale channels represent a unique room-temperature charge detector that also achieves charge sensitivity with single-electron resolution. 11 The small channel allows current characteristics to be modulated sensitively by a single electron 11 and has the smaller Flicker noise in comparison with wide channels, 12 leading to a charge sensitivity of 1.3 Â 10 À3 e/Hz 0.5 even at room temperature. Such features of the silicon nanometerscale FET expand the range of detectable charge signals and have been recently used to sense infrared radiation, 13 molecules, 14 and mechanical motion. 15 However, the operation speed of the dc FET is slow ($2 kHz) due to the large channel resistance R C combined with the large stray capacit...

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Noise performance of the radio-frequency single-electron transistor

Cited by 52 publications

References 25 publications

Radio-frequency dispersive detection of donor atoms in a field-effect transistor

Radio-frequency dispersive detection of donor atoms in a field-effect transistor

Cyclostationary shot noise in mesoscopic measurements

Wide-bandwidth charge sensitivity with a radio-frequency field-effect transistor

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