We have measured the resistance noise of a two-dimensional (2D) hole system in a high mobility GaAs quantum well, around the 2D metal-insulator transition (MIT) at zero magnetic field. The normalized noise power SR/R 2 increases strongly when the hole density ps is decreased, increases slightly with temperature (T ) at the largest densities, and decreases strongly with T at low ps. The noise scales with the resistance, SR/R 2 ∼ R 2.4 , as for a second order phase transition such as a percolation transition. The ps dependence of the conductivity is consistent with a critical behavior for such a transition, near a density p * which is lower than the observed MIT critical density pc.PACS numbers: 71.30.+h, 71.27.+a, 72.70.+m, 73.21.Fg Two-dimensional (2D) dilute electronic systems at low temperature offer the unique opportunity to study the physical effects of strong Coulomb interactions. At low densities and in the limit of weak disorder, the correlations between the carriers should overcome the random motion of the electrons due to the fermions' confinement. The relative magnitude of these two effects is expressed by the ratio r s = E ee /E F between the Coulomb interaction (E ee ) and the Fermi (E F ) energies, which is proportional to m * /p s 1/2 , m * being the effective mass of the carriers, and p s their areal density. For r s ≫ 1, one expects to observe a Wigner crystal [1], thus raising the question of the nature of the transition to this state by varying the density. The recent observations of a metallic behavior at intermediate r s values, 4 < r s < 36, in 2D electron or hole systems (2DES or 2DHS) in high mobility silicon metal-oxide-semiconductor field effect transistors (Si-MOSFETs) and in certain heterostructures has raised the possibility of a new metallic phase due to the interactions [2]. The metallic behavior is defined by a decrease of the resistivity ρ for decreasing temperature T , for p s larger than a critical density p c . In contrast, an insulating behavior (dρ/dT < 0) occurs for p s < p c . However, the nature of this metal-insulator transition (MIT) remains the subject of ongoing debate [2,3,4,5,6,7,8,9,10,11,12,13,14,15,16,17].Real systems are subject to disorder, which makes the physical situation much richer. Experimentally, around the MIT, the physical observables depend significantly on the disorder [2,5,6,7,8,9,10]. Weak disorder could reduce the threshold for Wigner crystallisation r . The system may also freeze into a glass [9,10,19,20] instead of crystallizing. In GaAs 2DHS, recent local electrostatic studies [11] and parallel magnetoresistance measurements [12] suggest the coexistence of two phases. Such a situation has been predicted by theories in which the disorder induces the spatial separation of a low and a high density phase [15,16,17]. In these models, the transport and other physical properties result from the percolation of the most conducting phase through the insulating one. Such descriptions must be distinguished from the percolating network of Fermi liquid pud...