Noise spectroscopy on defects with thermally activated capture in GaAs

Seghier, D.; Gíslason, H. P.

doi:10.1016/j.mssp.2006.01.016

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2008

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“…In previous work [14] we reported the observation of a deep defect with emission energy of E e = 0.8 eV in the same AlGaN materials using noise measurements. We showed that this centre is metastable and measured its capture barrier energy E c ∼ 0.26 eV.…”

Section: Resultsmentioning

confidence: 98%

Opto-electrical characterization of electrically active point defects in Al_xGa_1−xN

Seghier¹,

Gíslason

2008

J. Phys. D: Appl. Phys.

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Different techniques including admittance spectroscopy, noise spectroscopy and photocurrent measurements have been applied to AlxGa1−xN materials grown by metal–organic chemical vapour deposition to investigate their electrical properties. A continuous band of shallow donors with ionization energies ranging from 50 to 110 meV which contribute to the residual conductivity of AlxGa1−xN alloys is observed. We also identify a deep centre with optical ionization energy of 1.2 eV which controls the slow buildup of the photocurrent when the materials are illuminated with sub-bandgap photon energy. This centre also induces persistent photocurrent in the material. In the light of this finding we discuss DX-like defects, which may contribute to the slow relaxation phenomena in AlGaN related structures.

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Section: Resultsmentioning

confidence: 98%

Opto-electrical characterization of electrically active point defects in Al_xGa_1−xN

Seghier¹,

Gíslason

2008

J. Phys. D: Appl. Phys.

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Noise spectroscopy on defects with thermally activated capture in GaAs

Cited by 1 publication

References 9 publications

Opto-electrical characterization of electrically active point defects in Al_xGa_1−xN

Opto-electrical characterization of electrically active point defects in Al_xGa_1−xN

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Noise spectroscopy on defects with thermally activated capture in GaAs

Cited by 1 publication

References 9 publications

Opto-electrical characterization of electrically active point defects in AlxGa1−xN

Opto-electrical characterization of electrically active point defects in AlxGa1−xN

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Opto-electrical characterization of electrically active point defects in Al_xGa_1−xN

Opto-electrical characterization of electrically active point defects in Al_xGa_1−xN