Interfacial electron-transfer (ET) reactions underpin
the interconversion
of electrical and chemical energy. It is known that the electronic
state of electrodes strongly influences ET rates because of differences
in the electronic density of states (DOS) across metals, semimetals,
and semiconductors. Here, by controlling interlayer twists in well-defined
trilayer graphene moirés, we show that ET rates are strikingly
dependent on electronic localization in each atomic layer and not
the overall DOS. The large degree of tunability inherent to moiré
electrodes leads to local ET kinetics that range over 3 orders of
magnitude across different constructions of only three atomic layers,
even exceeding rates at bulk metals. Our results demonstrate that
beyond the ensemble DOS, electronic localization is critical in facilitating
interfacial ET, with implications for understanding the origin of
high interfacial reactivity typically exhibited by defects at electrode–electrolyte
interfaces.