2015
DOI: 10.1039/c5mh00030k
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Non-aqueous electrodeposition of functional semiconducting metal chalcogenides: Ge2Sb2Te5 phase change memory

Abstract: We report a new method for electrodeposition of device-quality metal chalcogenide semiconductor thin films and nanostructures from a single, highly tuneable, non-aqueous electrolyte. This method opens up the prospect of electrochemical preparation of a wide range of functional semiconducting metal chalcogenide alloys that have applications in various nano-technology areas, ranging from the electronics industry to thermoelectric devices and photovoltaic materials. The functional operation of the new method is d… Show more

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Cited by 29 publications
(40 citation statements)
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“…This paper is organised as follows. In the next section, "Electrodeposited Phase Change Memory", we will show our previous results on the electrical characteristics of thin film and confined nano-cells of Ge-Sb-Te phase change memory, 12 now supported by a detailed transmission electron microscopy analysis of the composition and elemental distribution of the confined cells. The "Non-aqueous Electrodeposition from Non-Coordinating Solvents" section, will explain the rationale behind the solvent, electrolyte and precursor selection.…”
Section: Introductionmentioning
confidence: 90%
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“…This paper is organised as follows. In the next section, "Electrodeposited Phase Change Memory", we will show our previous results on the electrical characteristics of thin film and confined nano-cells of Ge-Sb-Te phase change memory, 12 now supported by a detailed transmission electron microscopy analysis of the composition and elemental distribution of the confined cells. The "Non-aqueous Electrodeposition from Non-Coordinating Solvents" section, will explain the rationale behind the solvent, electrolyte and precursor selection.…”
Section: Introductionmentioning
confidence: 90%
“…1). 12 The fabrication was undertaken by either patterning the top TiN electrode directly on the Ge-Sb-Te thin film (Fig. 1a) or filling etched SiO2 nanoholes with Ge-Sb-Te by electrodeposition on TiN bottom electrodes and subsequently patterning the top TiN electrode (Fig.…”
Section: Electrical Characteristics Of Thin Films and Confined Cellsmentioning
confidence: 99%
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“…Raman: 240 cm À1 (A 1g [LaCl 6 ] 3À ). 1 X-ray experimental. Crystals suitable for single crystal X-ray analysis were obtained as described above.…”
Section: Spectroscopic Characterisation and Comparisonsmentioning
confidence: 99%
“…Besides its obvious use for the growth of pure metals and metallic alloys, electrodeposition is a powerful methodology that can be utilized for the preparation of semiconducting metal oxides, hydroxides and chalcogenides, either in the form of lms or nanostructures. [33][34][35][36] So far, investigation on BFO electrodeposition has been very scarce and the results have not been fully satisfactory in the sense that they lack a clear and unambiguous structural characterisation. [37][38][39] Moreover, in these previous works, emphasis was laid on the electrochemical performance of the materials (i.e., BFO nanoake and thin lms electrodes were applied in supercapacitor applications).…”
Section: Introductionmentioning
confidence: 99%