Non-axial NO-VZn shallow acceptor complexes in nitrogen implanted p-type ZnO thin films

Li, Wanjun; Zhang, Hong; Zhang, Xiaoyu; Qin, Guoping; Li, Honglin; Xiong, Yifeng; Yang, Lijuan; Ruan, Haibo; Tong, Cunzhu; Kong, Chunyang; Fang, Liang

doi:10.1016/j.apsusc.2020.147168

Cited by 20 publications

(13 citation statements)

References 47 publications

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“…There is strong evidence that interstitial hydrogen, H i , plays a role of donor [ 6 , 8 ], while hydrogen molecule, H 2 , has been shown to be electrically inert in ZnO [ 9 , 10 ]. However, recent investigations strongly suggest that hydrogen impurity in ZnO material may be involved in a number of complexes with native point defects, such as V Zn ·nH, Zn i ·V O ·H, and others [ 2 , 3 , 4 , 5 , 11 , 12 , 13 , 14 ]. Some of these complexes introduce shallow donor and acceptor levels that affect the resulting ZnO conductivity [ 4 , 10 , 15 , 16 , 17 , 18 ].…”

Section: Introductionmentioning

confidence: 99%

Structural Properties of Thin ZnO Films Deposited by ALD under O-Rich and Zn-Rich Growth Conditions and Their Relationship with Electrical Parameters

et al. 2021

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The structural, optical, and electrical properties of ZnO are intimately intertwined. In the present work, the structural and transport properties of 100 nm thick polycrystalline ZnO films obtained by atomic layer deposition (ALD) at a growth temperature (Tg) of 100–300 °C were investigated. The electrical properties of the films showed a dependence on the substrate (a-Al2O3 or Si (100)) and a high sensitivity to Tg, related to the deviation of the film stoichiometry as demonstrated by the RT-Hall effect. The average crystallite size increased from 20–30 nm for as grown samples to 80–100 nm after rapid thermal annealing, which affects carrier scattering. The ZnO layers deposited on silicon showed lower strain and dislocation density than on sapphire at the same Tg. The calculated half crystallite size (D/2) was higher than the Debye length (LD) for all as grown and annealed ZnO films, except for annealed ZnO/Si films grown within the ALD window (100–200 °C), indicating different homogeneity of charge carrier distribution for annealed ZnO/Si and ZnO/a-Al2O3 layers. For as grown films the hydrogen impurity concentration detected via secondary ion mass spectrometry (SIMS) was 1021 cm−3 and was decreased by two orders of magnitude after annealing, accompanied by a decrease in Urbach energy in the ZnO/a-Al2O3 layers.

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Section: Introductionmentioning

confidence: 99%

Structural Properties of Thin ZnO Films Deposited by ALD under O-Rich and Zn-Rich Growth Conditions and Their Relationship with Electrical Parameters

et al. 2021

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“…In the spectrum of the G2 sample, the S1 signal disappeared, while a new resonance signal was detected at 322 mT with g = 2.04 (S3). Zhang et al [51] observed a similar signal in N-implanted ZnO at 324 mT (g = 2.0025), which was attributed to V 0 -V Zn clusters. Other researchers recorded a signal at g = 2.03, associated with negatively charged zinc vacancy-interstitial zinc (V − Zn :Zn i 0 ) complexes [53].…”

Section: Samplementioning

confidence: 79%

“…The second signal was detected at a g-value of 1.997 (S2). According to literature data, the signal with a g-factor close to the free electron 2.0023 in ZnO refers to singly ionized oxygen vacancies (V0 + ) defects [50,51]. Other researchers detected a similar peak with g = 2.003, attributed to Zn vacancy [52] or nonaxial negatively charged Zn vacancy complexes [53].…”

Section: Samplementioning

confidence: 93%

“…The second signal was detected at a g-value of 1.997 (S2). According to literature data, the signal with a g-factor close to the free electron 2.0023 in ZnO refers to singly ionized oxygen vacancies (V 0 + ) defects [50,51]. The band at 2960 cm −1 corresponds to asymmetric C-H stretching, while the bands at 2924 cm −1 and 2852 cm −1 correspond to saturated sp 3 carbon [46].…”

Section: Samplementioning

confidence: 94%

“…It is likely that ZnO is modified by nitrogen, originating from the precipitant. It was revealed that the N ion implantation can induce a large number of V Zn and V 0 defects [51]. Pei and co-workers [66] reported that the presence of both Zn i and V 0 in ZnO is beneficial for achieving good transportation and separation of photo-excited charge carriers, thus causing the improvement of the ZnO photocatalytic performance.…”

Section: Samplementioning

confidence: 99%

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Modified Approach Using Mentha arvensis in the Synthesis of ZnO Nanoparticles—Textural, Structural, and Photocatalytic Properties

et al. 2022

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Zinc oxide arouses considerable interest since it has many applications—in microelectronics, environmental decontaminations, biomedicine, photocatalysis, corrosion, etc. The present investigation describes the green synthesis of nanosized ZnO particles using a low-cost, ecologically friendly approach compared to the classical methods, which are aimed at limiting their harmful effects on the environment. In this study, ZnO nanoparticles were prepared using an extract of Mentha arvensis (MA) leaves as a stabilizing/reducing agent, followed by hydrothermal treatment at 180 °C. The resulting powder samples were characterized by X-ray diffraction (XRD) phase analysis, infrared spectroscopy (IRS), scanning electron microscopy (SEM), and electron paramagnetic resonance (EPR). The specific surface area and pore size distribution were measured by the Brunauer–Emmett–Taylor (BET) method. Electronic paramagnetic resonance spectra were recorded at room temperature and at 123 K by a JEOL JES-FA 100 EPR spectrometer. The intensity of the bands within the range of 400–1700 cm−1 for biosynthesized ZnO (BS-Zn) powders decreased with the increase in the Mentha arvensis extract concentration. Upon increasing the plant extract concentration, the relative proportion of mesopores in the BS-Zn samples also increased. It was established that the photocatalytic performance of the biosynthesized powders was dependent on the MA concentration in the precursor solution. According to EPR and PL analyses, it was proved that there was a presence of singly ionized oxygen vacancies (V0+) and zinc interstitials (Zni). The use of the plant extract led to changes in the morphology, phase composition, and structure of the ZnO particles, which were responsible for the increased photocatalytic rate of discoloration of Malachite Green dye.

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Nanoclay Mediated Self‐Promoted Reactive Oxygen Species Releasing Enables Efficient Antimicrobial

Ji,

Yu,

Wang

et al. 2024

Adv Funct Materials

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Reactive oxygen species (ROS) releasing materials are increasingly used in nanomedicines due to their effectiveness against a broad spectrum of microbes. However, most ROS‐releasing materials rely on external stimuli such as photoirradiation, either through photodynamic or photocatalytic processes, which limits their practical applications. Herein, this work presents a novel nanoclay mediated self‐promoted ROS releasing material called oxygen vacancies‐rich ZnO/kaolinite (Ov‐rich ZnO/Kaol). Both experiments and density functional theory (DFT) calculations reveal that the introduction of kaolinite increases the content of Ov in ZnO, and the change in the electronic structure promotes the process of oxygen adsorption and activation, resulting in the generation of ·O2−through oxygen reduction without photoirradiation. Molecular dynamics simulations confirm that Ov enhances the interaction between the material and bacterial membrane, promoting the bacterial‐killing effect of ·O2−. More importantly, Ov‐rich ZnO/Kaol is successfully prepared on a pilot scale and used to manufacture antibacterial gauze, which showed at least 99% antibacterial activity against both Escherichia coli (E. coli) and Staphylococcus aureus (S. aureus) in the absence of light. The as‐prepared material also exhibited satisfactory biocompatibility and biosafety. This method can offer a more benign approach to address the limitations of traditional photoirradiation‐dependent photosensitizers for antimicrobial gauze.

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Non-axial NO-VZn shallow acceptor complexes in nitrogen implanted p-type ZnO thin films

Cited by 20 publications

References 47 publications

Structural Properties of Thin ZnO Films Deposited by ALD under O-Rich and Zn-Rich Growth Conditions and Their Relationship with Electrical Parameters

Structural Properties of Thin ZnO Films Deposited by ALD under O-Rich and Zn-Rich Growth Conditions and Their Relationship with Electrical Parameters

Modified Approach Using Mentha arvensis in the Synthesis of ZnO Nanoparticles—Textural, Structural, and Photocatalytic Properties

Nanoclay Mediated Self‐Promoted Reactive Oxygen Species Releasing Enables Efficient Antimicrobial

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