2019
DOI: 10.1038/s41598-019-45417-3
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Non-conventional graphene superlattices as electron band-pass filters

Abstract: Electron transmission through different non-conventional (non-uniform barrier height) gated and gapped graphene superlattices (GSLs) is studied. Linear, Gaussian, Lorentzian and Pöschl-Teller superlattice potential profiles have been assessed. A relativistic description of electrons in graphene as well as the transfer matrix method have been used to obtain the transmission properties. We find that it is not possible to have perfect or nearly perfect pass bands in gated GSLs. Regardless of the potential profile… Show more

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Cited by 9 publications
(7 citation statements)
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“…In short, to have electron passbands in GPL-FVGSLs a precise control of θ, η, PF, and N is needed. Here, it is also important to mention that the passbands of GPL-FVGSLs are similar to the ones of gapless non-conventional (Gaussian) graphene superlattices [19]. In both cases, there are residual oscillations that impede perfect flat transmission minibands.…”
Section: Resultsmentioning
confidence: 80%
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“…In short, to have electron passbands in GPL-FVGSLs a precise control of θ, η, PF, and N is needed. Here, it is also important to mention that the passbands of GPL-FVGSLs are similar to the ones of gapless non-conventional (Gaussian) graphene superlattices [19]. In both cases, there are residual oscillations that impede perfect flat transmission minibands.…”
Section: Resultsmentioning
confidence: 80%
“…In fact, after PF = 0.4 there are only three broad transmission minibands, see figures 2(d)-(f). The remaining aspect that we have to find out it is if the GPL profile can provide perfect or nearly perfect flat transmission bands or passbands as in the case of semiconductor and gapped graphene superlattices [1,2,19]. To do so, we can fix the angle of incidence and plot the transmission coefficient as a function of ξ max .…”
Section: Resultsmentioning
confidence: 99%
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“…From the experimental point of view, Gómez et al 19 modified the model by considering the Gaussian potential profile of barriers only, which was then verified with GaAs/Al x Ga 1−x As superlattices in experiments 20 . In addition, Gaussian superlattices can also be formed by electrostatic gating 21 . However, the doping level of barriers and the mass of nanoscale electrodes challenge the experiments of non-conventional superlattices.…”
Section: Introductionmentioning
confidence: 99%