2007
DOI: 10.1504/ijmmm.2007.012672
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Non-destructive evaluation methods for subsurface damage in silicon wafers: a literature review

Abstract: The Subsurface Damage (SSD) in silicon wafers induced by any mechanical material-removal processes has to be removed by subsequent processes. Therefore, the measurement of SSD is critically important for cost-effective manufacturing of silicon wafers. This review paper presents several Non-Destructive Evaluation (NDE) methods for SSD in silicon wafers, including X-ray diffraction, micro-Raman spectroscopy, photoluminescence and laser scattering.

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Cited by 14 publications
(11 citation statements)
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“…The X-ray diffraction (XRD) method is used to measure the machining-induced stress in the semiconductor materials [23,85]. Generally, the diffraction spectrum is narrow and sharp if a sample does not have residual stresses; otherwise, the spectrum is broadened with diffraction peaks shifted.…”
Section: Other Methodsmentioning
confidence: 99%
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“…The X-ray diffraction (XRD) method is used to measure the machining-induced stress in the semiconductor materials [23,85]. Generally, the diffraction spectrum is narrow and sharp if a sample does not have residual stresses; otherwise, the spectrum is broadened with diffraction peaks shifted.…”
Section: Other Methodsmentioning
confidence: 99%
“…The Argonne National Laboratory and the Kansas State University jointly developed the cross-polarization confocal microscopy (CPCM) to measure SSD in the ground ceramics and silicon wafers [5,15,[85][86][87][88][89][90][91][92]. As shown in Figure 8, an incident light is linearly polarized and hits the surface of a sample.…”
Section: Laser Scatteringmentioning
confidence: 99%
“…Numerous methods have been used by various investigators to measure surface damage in silicon wafers [Lu et al 2007]. These methods include cross-sectional microscopy, scanning electron microscopy, ultrasonic measurement, optical scattering method, X-ray topography, and scanning infrared depolarization (SIRD).…”
Section: Subsurface Damagementioning
confidence: 99%
“…Silicon wafers are presently used in ϳ90% of microelectronic devices, and therefore NDE of this material is of great practical interest. 32 Especially the detection of subsurface defects such as voids or bubbles is a difficult task in comparison with surface-breaking cracks. The main drawback of the LIFU method is the contact of one side of the sample with water.…”
Section: Experiments With Silicon Wafersmentioning
confidence: 99%