Non-destructive evaluation of the strain distribution in selected-area He+ ion irradiated 4H-SiC

Yang, Subing; Tokunaga, Sakiko; Kondo, Minako; Nakagawa, Yuki; Shibayama, Tamaki

doi:10.1016/j.apsusc.2019.144051

Cited by 15 publications

(9 citation statements)

References 28 publications

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“…More details of the selected-area ion irradiation procedure are provided in Ref. [32]. The non-selected-area irradiation, i.e., without using the mask, was also prepared at room temperature with a fluence of 5×10 16 cm −2 .…”

Section: Methodsmentioning

confidence: 99%

“…Details of this strain/stress measurement method using EBSD and the strain results have been published elsewhere (Ref. [32]).…”

Section: Methodsmentioning

confidence: 99%

“…Kondo et al [31] explored the stable surface class in 6H-SiC by analyzing nano-void shapes using TEM, which suggests that the observation of some second-type defects formed by the accumulation of point defects might provide insight into the defect distribution in irradiated α-SiC. In addition, in our previous study, anisotropic swelling or strain was introduced in 4H-SiC using selected-area ion irradiation, as demonstrated by atomic force microscopy and electron back scattering diffraction (EBSD) [32]. Hence, this approach might be useful to explore the phenomenon and underlying mechanism of anisotropic swelling in SiC.…”

Section: Introductionmentioning

confidence: 96%

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Anisotropic defect distribution in He+-irradiated 4H-SiC: Effect of stress on defect distribution

et al. 2021

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Section: Methodsmentioning

confidence: 99%

“…Details of this strain/stress measurement method using EBSD and the strain results have been published elsewhere (Ref. [32]).…”

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 96%

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Anisotropic defect distribution in He+-irradiated 4H-SiC: Effect of stress on defect distribution

et al. 2021

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“…However, ion implantation will also inevitably introduce great strain and swelling in the materials. This strain and swelling, measured by electron backscattering diffraction and Raman spectroscopy in our previous investigation, 6 has been found to significantly change the mechanical and electronic properties of the SiC devices. 5 Thus, a fundamental understanding of the strain and swelling accumulation in irradiated SiC is important for such applications.…”

Section: Introductionmentioning

confidence: 65%

“…To perform the selected-area ion irradiation, part of the sample was covered with a mask during irradiation, and further details of the selected-area ion irradiation are given in Ref. 6. The penetration profile of He + ions into SiC was calculated by the SRIM 2013 software using a full damage cascade model with the assumption of a sample density of 3.21 g cm −3 , while the threshold displacement energies for the C and Si sub-lattices used in the calculation were 21 and 35 eV, 18 respectively.…”

Section: A Irradiation Experiments and Microstructural Characterizationmentioning

confidence: 99%

Electron energy-loss spectroscopic evaluation of depth-dependent swelling of He+ ion-irradiated 4H-SiC correlated with defect type

Yang

Nakagawa

Kondo

et al. 2020

Journal of Applied Physics

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Various defects and amorphous transitions are the primary mechanism behind the accumulation of swelling in silicon carbide (SiC). In this study, selected-area He + ion irradiation was carried out on single-crystal 4H-SiC using fluences of 1 × 10 15 , 5 × 10 16 , and 1 × 10 17 cm −2 at room temperature. The defect distribution in the samples with varying irradiation fluences was analyzed using transmission electron microscopy (TEM), while the local swelling of regions under varying damage conditions was estimated using electron energy-loss spectroscopy. The results provide the range of swelling in SiC possessing different primary defect types, such as point defects or tiny clusters, black spot defects, and amorphous SiC. A saturation swelling with a value of 2%-3% in the near-surface region, induced by point defects or tiny clusters (invisible in TEM), was observed at room temperature over the fluence range of 1 × 10 15 to 1 × 10 17 cm −2 . This saturation has already reached at a great low dose of about 0.02 dpa. The swelling of the region containing black spot defects ranges from about 3% to 7%. Helium bubbles increase the volume swelling of SiC, while the He + ion irradiation may also perform a decreasing effect on the volume swelling below a certain irradiation fluence.

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Effect of 2 MeV Electron Irradiation on the Electronic Structure and Photoluminescence of SiC

Chang,

Cao,

Wang

et al. 2024

J. Electron. Mater.

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Non-destructive evaluation of the strain distribution in selected-area He+ ion irradiated 4H-SiC

Cited by 15 publications

References 28 publications

Anisotropic defect distribution in He+-irradiated 4H-SiC: Effect of stress on defect distribution

Anisotropic defect distribution in He+-irradiated 4H-SiC: Effect of stress on defect distribution

Electron energy-loss spectroscopic evaluation of depth-dependent swelling of He+ ion-irradiated 4H-SiC correlated with defect type

Effect of 2 MeV Electron Irradiation on the Electronic Structure and Photoluminescence of SiC

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