Non-destructive plasma frequency measurement for a semiconductor thin film using broadband surface plasmon polaritons

Yang, Tao; Ge, Jiacheng; Li, Xing’ao; Stantchev, Rayko I.; Zhu, Yanyan; Zhou, Yuan

doi:10.1016/j.optcom.2017.10.040

Cited by 6 publications

(3 citation statements)

References 23 publications

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“…Indeed, most semiconductors have plasma frequencies in the THz domain [158], THz surface plasmon polaritons (SPPs) are anticipated to be useful tools for the non-destructive detection of defects on semiconductor surfaces [159]. Since the energy confinement of SPPs is related to the degree of overlap between the frequency of SPPs and the semiconductor's plasma frequency [160,161], a high-sensitivity inspection can be achieved by using a THz wave with frequencies slightly lower than the plasma frequency of the semiconductor. Yang et al developed a THz-band defect inspection system with the principle being schematically shown in figure 11(a) [162].…”

Section: Defect Inspection Systems Using Terahertz (Thz) Wavesmentioning

confidence: 99%

“…the ones in sections 3.1-3.5) highly rely on innovations in optical microscopy techniques. Optical imaging-based defect inspection technology acquires position-registered images of a wafer specimen [161,165], while the specimen base plate is scanning over a region of interest. Defect signals are detected by a fast image-comparison algorithm that processes acquired images with reference defect-free images [165].…”

Section: Defect Inspection Using Hyperbolic Bloch Modesmentioning

confidence: 99%

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Optical wafer defect inspection at the 10 nm technology node and beyond

Zhu¹,

Liu²,

Xu³

et al. 2022

Int. J. Extrem. Manuf.

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The growing demand for electronic devices, smart devices, and the Internet of Things constitutes the primary driving force for marching down the path of decreased critical dimension and increased circuit intricacy of integrated circuits. However, as sub-10 nm high-volume manufacturing is becoming the mainstream, there is greater awareness that defects introduced by original equipment manufacturer components impact yield and manufacturing costs. The identification, positioning, and classification of these defects, including random particles and systematic defects, are becoming more and more challenging at the 10 nm node and beyond. Very recently, the combination of conventional optical defect inspection with emerging techniques such as nanophotonics, optical vortices, computational imaging, quantitative phase imaging, and deep learning is giving the field a new possibility. Hence, it is extremely necessary to make a thorough review for disclosing new perspectives and exciting trends, on the foundation of former great reviews in the field of defect inspection methods. In this article, we give a comprehensive review of the emerging topics in the past decade with a focus on three specific areas: (1) the defect detectability evaluation, (2) the diverse optical inspection systems, and (3) the post-processing algorithms. We hope, this work can be of importance to both new entrants in the field and people who are seeking to use it in interdisciplinary work.

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Section: Defect Inspection Systems Using Terahertz (Thz) Wavesmentioning

confidence: 99%

Section: Defect Inspection Using Hyperbolic Bloch Modesmentioning

confidence: 99%

Optical wafer defect inspection at the 10 nm technology node and beyond

Zhu¹,

Liu²,

Xu³

et al. 2022

Int. J. Extrem. Manuf.

View full text Add to dashboard Cite

show abstract

“…If the HMA supports plasmonic propagating modes, then indirect techniques such as the proposal in Ref. 45 can also give information on ω p .…”

Section: Table I Typical Range Of Fixed Parameters Of Bac Modelmentioning

confidence: 99%

Plasma frequency in doped highly mismatched alloys

Allami,

Krich

2020

Preprint

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Highly mismatched alloys (HMAs) have band structures strongly modified due to the introduction of the alloying element. We consider HMAs where the isolated state of the alloying element is near the host conduction band, which causes the conduction band to split into two bands. We determine the bulk plasma frequency when the lower-energy band is partially occupied, as by doping, using a semi-analytical method based on a disorder-averaged Green's function. We include the nontrivial effects of interband transitions to the higher-energy band, which limit the plasma frequency to be less than an effective band gap. We show that the distribution of states in the split bands causes plasmons in HMAs to behave differently than plasmons in standard metals and semiconductors. The effective mass of the lower split band m * changes with alloy fraction, and we find that the plasmon frequency with small carrier concentration n scales with √ n/m * rather than the n/m * that is expected in standard materials. We suggest experiments to observe these phenomena. Considering the typical range of material parameters in this group of alloys and taking a realistic example, we suggest that HMAs can serve as highly tunable low-frequency plasmonic materials.

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The use of plasmon resonance spectroscopy to analyze the parameters of thin layers

Yatsyshen

2020

J. Phys.: Conf. Ser.

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The paper presents the results of calculating the angular spectra of ellipsometric parameters and ellipse parameters upon reflection of right-polarized light onto the Kretchman layered system under conditions of excitation of surface plasmons at the boundary of the silver metal layer. It is shown that the studied parameters turn out to be very sensitive when a film of the material under study is placed in a layered system. The conditions are found under which a change in the nature of the polarization of the reflected wave occurs - from the right circular wave of the incident wave to the left elliptical in reflected light. Thus, the use of circular polarization and ellipsometry in plasmon resonance spectroscopy expands the possibilities of this method, in which only the energy reflection coefficient of p-polarized light is studied.

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Non-destructive plasma frequency measurement for a semiconductor thin film using broadband surface plasmon polaritons

Cited by 6 publications

References 23 publications

Optical wafer defect inspection at the 10 nm technology node and beyond

Optical wafer defect inspection at the 10 nm technology node and beyond

Plasma frequency in doped highly mismatched alloys

The use of plasmon resonance spectroscopy to analyze the parameters of thin layers

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