Boron-doped diamond (BDD) thin films with different crystal grain sizes were prepared by controlling the reacting gas pressure using hot filament chemical vapor deposition (HFCVD). The morphologies and structures of the prepared diamond thin films were characterized by scanning electron microscopy (SEM) and Raman spectroscopy. The electrochemical responses of K 4 Fe(CN) 6 on different BDD electrodes were investigated. The results suggested that electron transfer was faster at the boron-doped nanocrystalline diamond (BDND) thin film electrodes in comparison with that at other BDD thin film electrodes. The prepared BDD thin film electrodes without any modification were used to directly detect glucose in the basic solution. The results showed that the as-prepared BDD thin film electrodes exhibited good selectivity for detecting glucose in the presence of ascorbic acid (AA) and uric acid (UA). The higher sensitivity was observed on the BDND thin film grown on the boron-doped microcrystalline diamond (BDMD) thin film surface, and the linear response range, sensitivity and the low detection limit were 0.25-10 mM, 189.1 A mmol 1 cm 2 and 25 M (S/N=3) for glucose in the presence of AA and UA, respectively. diamond thin films, electrochemical properties, selective, glucose, detection