Non equilibrium phonon distribution and electron-phonon coupling in semiconductors

Mattos, J.C.V.; Leite, R. C. C.

doi:10.1016/0038-1098(73)90635-2

Cited by 36 publications

(2 citation statements)

References 7 publications

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“…and Vm*q2 (6) where e is the electronic charge, V is the volume of crystal and & is where E and e:: respectively are the high frequency and low frequency (X) 0 dielectric constants of the material. By assuming that the electron distribution is nondegenerate (fK<<l), substituting Eqs.…”

Section: Lbl-17488mentioning

confidence: 99%

Generation of nonequilibrium optical phonons in GaAs and their application in studying intervalley electron-phonon scattering

Collins

1984

Phys. Rev. B

147

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Section: Lbl-17488mentioning

confidence: 99%

Generation of nonequilibrium optical phonons in GaAs and their application in studying intervalley electron-phonon scattering

Collins

1984

Phys. Rev. B

147

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“…It turns out that even a very weak intensity of this disturbance dramatically suppresses the long-range effect associated with r inf while the system effective temperature and conductance are barely affected. This technique, which has been used in a number of solid-state projects [3], is contrasted with another nonequilibrium steady-state (NESS) by measuring the system conductance away from linear-response. The results demonstrate the diversity of outcomes obtainable by subjecting a quantum system to different NESS protocols.…”

mentioning

confidence: 99%

Suppressing quantum effects by optically driven nonequilibrium phonons

Ovadyahu

2021

Phys. Rev. B

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Optically-generated nonequilibrium phonon-distribution is used for exploring the origin of a nonlocal adiabatic response in an interacting Anderson insulator. Exposing the system to weak infrared radiation is shown to effectively suppress a long-range effect observed in field-effect experiments while producing little heating and barely changing the system conductance. These effects are shown to be consistent with the quantum nature of the effect and therefore are peculiar to disordered systems that are quantum-coherent.

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Study of band-gap shrinkage in cinnabar (α-HgS) by cathodoluminescence under very strong excitation

Massé¹,

Aicardi²,

Butti³

1977

Phys. Stat. Sol. (a)

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The effects of a very strong excitation on the edge luminescence of a-HgS are studied. Characteristic modifications are observed (emission peak shift towards low energy, broadening of the spectrum). The emission peak shift is interpreted in terms of a band-gap shrinkage b y interaction between free carriers. The state density of the conduction band is calculated, as well as the Fermi quasi-level of the electrons. Since the semiconductor is degenerate at the excitations used, the absence of a Burstein shift leads to the assumption that the radiative transitions have their origin in the bottom of the conduction band. E s wird der EinfluB einer sehr starken Anregung auf die Kantenlumineszenz von HgS-cr untersucht. Charakteristische Modifikationen werden beobachtet (Verschiebung der Emissionsmaxima nach niedriger Energie, Spektrenverbreiterung). Die Verschiebung der Emissionsmaxima wird mit einer Verkleinerung der Bandlucke durch Wechselwirkung zwischen freien Ladungstragern erklart, Sowohl die Zustandsdichte des Leitungsbandes wird berechnet als auch die Quasifermikante der Elektronen. Da der Halbleiter bei den benutzten Anregungen entartet ist, fiihrt das Fehlen einer Bursteinverschiebung zu der Annahme, daB die strahlenden UbergLnge ihren Ursprung am unteren Rand des Leitungsbandes haben.

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Non equilibrium phonon distribution and electron-phonon coupling in semiconductors

Cited by 36 publications

References 7 publications

Generation of nonequilibrium optical phonons in GaAs and their application in studying intervalley electron-phonon scattering

Generation of nonequilibrium optical phonons in GaAs and their application in studying intervalley electron-phonon scattering

Suppressing quantum effects by optically driven nonequilibrium phonons

Study of band-gap shrinkage in cinnabar (α-HgS) by cathodoluminescence under very strong excitation

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