Non-fundamental low frequency noise theory: Drain noise-current modeling of AlGaN/GaN HFETs

Manouchehri, Farzin; Valizadeh, Pouya; Kabir, Md. Tanvir

doi:10.1109/icnf.2011.5994305

Cited by 2 publications

(5 citation statements)

References 10 publications

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“…Among these, a model proposed by Hooge [6,7] suggests that the LFN primarily originates from the carrier mobility fluctuation. An alternative model proposed by McWhorter et al [9] suggests that the 1/ f LFN is due to the carrier trapping and de-trapping in a localized or a distributed band of trap sites.…”

Section: Modelingmentioning

confidence: 99%

“…The carriers number fluctuation is deemed to be caused by the trapping/de-trapping of the 2DEG electrons from acceptortype trap centers located in the buffer layer; each trap causes a random telegraph noise (RTN ). [9] Thus the power spectrum density (PSD) is given by…”

Section: Modelingmentioning

confidence: 99%

“…We define n 0 (y, E) = N T (y, E) • f t , where n 0 (y, E) is the density of filled traps and f t is the Fermi distribution function of the trapped levels. [9] The time-in-high-currentlevel, τ H , is simply the time when the trap is empty (the capture time is denoted by τ c ). Similarly, the time-in-low-currentlevel τ L , is the time when the trap is filled (the emission time is represented by τ e ).…”

Section: Modelingmentioning

confidence: 99%

“…The 2DEG concentration n is calculated with respect that the lower edge of the conduction band of GaN is at the heterointerface. Starting from an initial position assumed at the Fermi level (the lower edge of the conduction band of GaN at the hetero-interface), the following equation is used: [9] n…”

Section: Modelingmentioning

confidence: 99%

“…Also, in their 1/ f noise models of the intrinsic defect, the stress situation was not considered. Manouchehri et al [9] studied the AlGaN/GaN HEMT 1/ f noise model based on non-fundamental low frequency noise theory. In nature, it is a GaN-based HEMT 1/ f noise model based on the mobility fluctuation incorporation of the piezoelectric effects.…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

A unified drain current 1/fnoise model for GaN-based high electron mobility transistors

Liu¹,

Zhang²,

Ma³

et al. 2014

Chinese Phys. B

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In this work, we present a theoretical and experimental study on the drain current 1/ f noise in the AlGaN/GaN high electron mobility transistor (HEMT). Based on both mobility fluctuation and carrier number fluctuation in a twodimensional electron gas (2DEG) channel of AlGaN/GaN HEMT, a unified drain current 1/ f noise model containing a piezoelectric polarization effect and hot carrier effect is built. The drain current 1/ f noise induced by the piezoelectric polarization effect is distinguished from that induced by the hot carrier effect through experiments and simulations. The simulation results are in good agreement with the experimental results. Experiments show that after hot carrier injection, the drain current 1/ f noise increases four orders of magnitude and the electrical parameter degradation ∆g m /g m reaches 54.9%. The drain current 1/ f noise degradation induced by the piezoelectric effect reaches one order of magnitude; the electrical parameter degradation ∆g m /g m is 11.8%. This indicates that drain current 1/ f noise of the GaN-based HEMT device is sensitive to the hot carrier effect and piezoelectric effect. This study provides a useful reliability characterization tool for the AlGaN/GaN HEMTs.

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Section: Modelingmentioning

confidence: 99%

Section: Modelingmentioning

confidence: 99%

Section: Modelingmentioning

confidence: 99%

Section: Modelingmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

A unified drain current 1/fnoise model for GaN-based high electron mobility transistors

Liu¹,

Zhang²,

Ma³

et al. 2014

Chinese Phys. B

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Physics-based modeling and characterization of low frequency noise behavior for AlxGa1−xN/GaN HEMT

Cai,

Yao,

Liu

et al. 2024

AIP Advances

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A physics-based low frequency noise (LFN) model for AlxGa1−xN/GaN high electron mobility transistors (HEMTs) is proposed in this article. By treating the distributed low-density surface donor states as the responsible mechanism and exhibiting charge neutrality in combination with the electric field across the barrier layer, a compact expression for Schottky barrier height (SBH) capturing the physics behind the variations of AlxGa1−xN layer thickness is profiled, which incorporates the effect of strain relaxation caused by high Al fraction. Furthermore, the SBH is applied to develop VTH and IDS. The LFN model, dominated by the fluctuations of carriers and drain current in the channel caused by the trapping/detrapping process, is subsequently obtained. It is indicated that the larger threshold voltage, higher drain current, and normalized noise are observed by our model with respect to the traditional SBH expressed only by an interpolated linear function of x. The drain current noise behavior showing the 1/f spectrum down to very low frequencies is seriously subjected to the barrier thickness-dependent SBH of AlxGa1−xN/GaN HEMTs. The accuracy of the proposed model is also verified by comparison with the experimental results from different devices.

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Non-fundamental low frequency noise theory: Drain noise-current modeling of AlGaN/GaN HFETs

Cited by 2 publications

References 10 publications

A unified drain current 1/fnoise model for GaN-based high electron mobility transistors

A unified drain current 1/fnoise model for GaN-based high electron mobility transistors

Physics-based modeling and characterization of low frequency noise behavior for AlxGa1−xN/GaN HEMT

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