Non-isothermal crystallization kinetics of Ga–Sn–Te chalcogenide glasses by differential scanning calorimetry

Zhang, Yaqi; Li, Pengfei; Gao, Peng; Tu, Wenkang; Wang, Limin

doi:10.1007/s10853-016-0586-0

Cited by 9 publications

(2 citation statements)

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“…The Dietzel stability criterion Δ T = T c – T g is widely employed to analyze the thermal stability of amorphous materials . The values of Δ T for all of the researched samples (A0 to A15) in this work, the Δ T values were comparatively minor and reduced from 37 K (A0) to 18 K (A15).…”

Section: Resultsmentioning

confidence: 99%

“…34 The Dietzel stability criterion ΔT = T c − T g is widely employed to analyze the thermal stability of amorphous materials. 35 The values of ΔT for all of the researched samples (A0 to A15) in this work, the ΔT values were comparatively minor and reduced from 37 K (A0) to 18 K (A15). As the doping concentration of Ag was greater than 15 mol %, on the basis of its strong metallic properties, which could destabilize the stability of the glass structure and facilitate the crystal nucleation, 36 as indicated by the XRD patterns of the A18 sample.…”

Section: Resultsmentioning

confidence: 99%

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High-Conductivity Chalcogenide Glasses in Ag–Ga₂Te₃–SnTe Systems and Their Suitability as Thermoelectric Materials

Zhang

Chen³

et al. 2023

ACS Appl. Mater. Interfaces

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A novel high-conductivity Ag x [(Ga 2 Te 3 ) 34 (SnTe) 66 ] 100−x tellurium-based glassy system was fabricated via melt spinning with the glass formation area in the range of x = 0−15 mol %. A bulk Ag 10 [(Ga 2 Te 3 ) 34 (SnTe) 66 ] 90 glass (A10) was obtained via spark plasma sintering at 450 K using a 5 min dwell time and 400 MPa pressure. The fabricated A10 glass exhibited higher room-temperature conductivity (σ 300 K = 46 S m −1 ), larger glass transition temperature (T g = 482 K), and ultralower thermal conductivity (∼0.19 W m −1 K −1 ) compared to those of previously reported Cu−Ge−Te, Cu−As−Te, Cu−Ge−As−Te, and Cu−As−Se−Te glassy systems with the approximate doping concentrations of 5−20%, demonstrating that this distinctive Ag−Ga 2 Te 3 −SnTe system is interesting materials for thermoelectric applications. The high-conductivity Ag−Ga 2 Te 3 −SnTe glassy system will extend investigations into similar glassy semiconductors and also can be used for preparing glass ceramics with potential applications in other fields.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

High-Conductivity Chalcogenide Glasses in Ag–Ga₂Te₃–SnTe Systems and Their Suitability as Thermoelectric Materials

Zhang

Chen³

et al. 2023

ACS Appl. Mater. Interfaces

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Creating Single‐Crystalline β‐CaSiO₃ for High‐Performance Dielectric Packaging Substrate

Jia,

Wang,

Zhang

et al. 2024

Advanced Materials

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Abstractβ‐CaSiO3 based glass‐ceramics are among the most reliable materials for electronic packaging. However, developing a CaSiO3 glass‐ceramic substrate with both high strength (>230 MPa) and low dielectric constant (<5) remains challenging due to its polycrystalline nature. The present work has succeeded in synthesizing single‐crystalline β‐CaSiO3 for a high‐performance glass‐ceramic substrate. This is accomplished by introducing Al3+ into the CaO‐B2O3‐SiO2 glass system, and by optimizing the sintering condition. Al3+ doping facilitates a heterogeneous network structure that energetically favors the precipitation of polycrystalline particles, including nanosized β‐CaSiO3 crystals and sub‐nanosized α‐CaSiO3 crystals. As the sintering temperature increases, the nano α‐CaSiO3 crystals (2–10 nm) are gradually absorbed by the β‐CaSiO3 crystals. Through atomic rearrangement, α‐CaSiO3 crystals transform into micrometer‐sized single crystal β‐CaSiO3 (1–2 µm) with layered structure. The low temperature co‐fired β‐CaSiO3 glass‐ceramics exhibit exceptional properties, including a low dielectric constant of 4.04, a low dielectric loss of 3.15 × 10−3 at 15 GHz, and a high flexural strength of 256 MPa. This work provides a new strategy for fabricating high‐performance single‐crystalline glass‐ceramics for electronic packaging and other applications.

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Thermal analysis and non-isothermal crystallization kinetics of Ag–Ga2Te3–SnTe telluride glasses

Zhang¹,

Zhang²,

Yu³

et al. 2023

Journal of Materials Research and Technology

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Non-isothermal crystallization kinetics of Ga–Sn–Te chalcogenide glasses by differential scanning calorimetry

Cited by 9 publications

References 39 publications

High-Conductivity Chalcogenide Glasses in Ag–Ga₂Te₃–SnTe Systems and Their Suitability as Thermoelectric Materials

High-Conductivity Chalcogenide Glasses in Ag–Ga₂Te₃–SnTe Systems and Their Suitability as Thermoelectric Materials

Creating Single‐Crystalline β‐CaSiO₃ for High‐Performance Dielectric Packaging Substrate

Thermal analysis and non-isothermal crystallization kinetics of Ag–Ga2Te3–SnTe telluride glasses

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Non-isothermal crystallization kinetics of Ga–Sn–Te chalcogenide glasses by differential scanning calorimetry

Cited by 9 publications

References 39 publications

High-Conductivity Chalcogenide Glasses in Ag–Ga2Te3–SnTe Systems and Their Suitability as Thermoelectric Materials

High-Conductivity Chalcogenide Glasses in Ag–Ga2Te3–SnTe Systems and Their Suitability as Thermoelectric Materials

Creating Single‐Crystalline β‐CaSiO3 for High‐Performance Dielectric Packaging Substrate

Thermal analysis and non-isothermal crystallization kinetics of Ag–Ga2Te3–SnTe telluride glasses

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Product

Resources

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High-Conductivity Chalcogenide Glasses in Ag–Ga₂Te₃–SnTe Systems and Their Suitability as Thermoelectric Materials

High-Conductivity Chalcogenide Glasses in Ag–Ga₂Te₃–SnTe Systems and Their Suitability as Thermoelectric Materials

Creating Single‐Crystalline β‐CaSiO₃ for High‐Performance Dielectric Packaging Substrate