Non-isothermal crystallization kinetics of non-crystalline Ge 10 Se 90−x Tl x  ternary glass alloys

El-Metwally, E.G.; Ismail, A. M.; Assim, E.M.

doi:10.1016/j.jnoncrysol.2018.05.033

Cited by 11 publications

(19 citation statements)

References 49 publications

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“…All characteristic temperatures are shifted towards higher temperatures by increasing a. The increase of T g with α is due to the variation of the glass transition process relaxation time relative to the time allowed by various heating rates a [9,44]. On the other hand, the increase of T p with a is ascribed to the insufficient time needed for the crystallization process and crystal growth at higher a [9,44].…”

Section: Thermal Analysismentioning

confidence: 94%

“…The increase of T g with α is due to the variation of the glass transition process relaxation time relative to the time allowed by various heating rates a [9,44]. On the other hand, the increase of T p with a is ascribed to the insufficient time needed for the crystallization process and crystal growth at higher a [9,44]. The values of T , g T , c T p and T m are decremented in the presence of Sb element when compared with Tl 20 Se 70 Ge 10 (TSG) composition at a = 10 K.min −1 as example which reported before in our previous work [9] as shown in table 1.…”

Section: Thermal Analysismentioning

confidence: 99%

“…On the other hand, the increase of T p with a is ascribed to the insufficient time needed for the crystallization process and crystal growth at higher a [9,44]. The values of T , g T , c T p and T m are decremented in the presence of Sb element when compared with Tl 20 Se 70 Ge 10 (TSG) composition at a = 10 K.min −1 as example which reported before in our previous work [9] as shown in table 1. The observed decrease in T , g T , c T p and T m can be interpreted according to the chemical order network (CON) model [45].…”

Section: Thermal Analysismentioning

confidence: 99%

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Non-isothermal crystallization kinetics and memory switching properties of Tl-Se-Ge-Sb chalcogenide semiconductor alloy for thermally stable phase change memory applications

El-Metwally,

Ismail

2023

Phys. Scr.

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Quaternary (Tl20Se70Ge10)0.85Sb0.15 chalcogenide glass was synthesized using melt-quenching and thermal evaporation techniques for bulk and thin film samples, and its amorphous character was confirmed by XRD. Based on different models of non-isothermal crystallization kinetics, the average values of the glass transition E ̅ g and the crystallization E ̅ c activation energies are 121.33 and 82.94 kJ mol−1, respectively. The crystallization mechanism in the examined composition is 2D nucleation growth, according to Avrami exponent n . Thermal parameters of the studied quaternary glass, like fragility F g , fluctuation free volume F FV , reduced glass transition temperature T rg , thermal stability SP and glass formation ability GFA were investigated and indicated that the (Tl20Se70Ge10)0.85Sb0.15 ChG exhibits a good ability of glass formation and thermal stability. The obtained results of the dc electrical conductivity σ dc are found to increase with temperature and decrease with film thickness. The electrical conduction activation energy ∆ E σ (0.583 ± 0.004 eV) is thickness independent and the predominant conduction mechanism is the hopping of charge carriers in the band tail localized states. The ( I – V ) curves of (Tl20Se70Ge10)0.85Sb0.15 chalcogenide glass film samples were analyzed and shown to be appropriate for a memory switch. The mean value of the threshold voltage V ̅ th decreases exponentially as temperature increases, whereas it increases linearly as film thickness increases. The values of threshold voltage ε th and threshold resistance ∆ E R activation energies are 0.282 ± 0.003 and 0.521 ± 0.004 eV, respectively. The obtained switching characteristics data were discussed in view of the electrothermal model motivated by current channel Joule heating. These findings highlight the suitability of the investigated composition for various optoelectronic applications, such as memory switching devices, optical data storage, phase-change memories and optical fibres sensing devices.

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Section: Thermal Analysismentioning

confidence: 94%

Section: Thermal Analysismentioning

confidence: 99%

Section: Thermal Analysismentioning

confidence: 99%

See 1 more Smart Citation

Non-isothermal crystallization kinetics and memory switching properties of Tl-Se-Ge-Sb chalcogenide semiconductor alloy for thermally stable phase change memory applications

El-Metwally,

Ismail

2023

Phys. Scr.

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“…Among these methods are the Kissinger and Augis-Bennett methods. Kissinger proposed a model that allows the determination of the crystallization activation energy (E a ) according to [21][22][23][24]:…”

Section: Introductionmentioning

confidence: 99%

“…where E a is obtained by linear regression of the ln[β/(T p -300)] versus 1/T p . The Avrami index (n) is an important parameter for kinetics study since it provides information about crystal nucleation and growth [24][25][26]. With the E a values obtained, the Avrami index (n) can be calculated from Eq.…”

Section: Introductionmentioning

confidence: 99%

Crystallization kinetics of glass prepared with foundry slag

et al. 2021

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Iron foundry slag and hydrated lime were used in glass preparation by the melt-quenching method. The glass obtained was heattreated using the thermal analysis technique. A crystallization kinetics study was carried out with glass powder samples using a nonisothermal method at five different heating rates by differential scanning calorimetry (DSC). Considering that few studies compare kinetic results obtained by different methods, in this work, the activation energy (E a ) of the crystallization process was obtained using the Kissinger and Augis-Bennett models for comparison purposes. The E a results showed negligible variation in comparing the methods used, nevertheless, linear fitting of crystallization peaks was slightly better by the Augis-Bennett than the Kissinger model. The Avrami index values showed an increasing nucleation rate for two stable phases and decreasing for the metastable phase present in the glass-ceramic. Avrami indexes obtained also indicated an interface-controlled particle growth, whose scanning electron microscopy images showed different morphologies of crystalline particles in the bulk of the glass matrix.

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Model fitted and model free approaches for crystallization kinetics in Se85Te15-xBix glasses

Khan

Srivastava

2021

Chinese Journal of Physics

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Non-isothermal crystallization kinetics of non-crystalline Ge 10 Se 90−x Tl x ternary glass alloys

Cited by 11 publications

References 49 publications

Non-isothermal crystallization kinetics and memory switching properties of Tl-Se-Ge-Sb chalcogenide semiconductor alloy for thermally stable phase change memory applications

Non-isothermal crystallization kinetics and memory switching properties of Tl-Se-Ge-Sb chalcogenide semiconductor alloy for thermally stable phase change memory applications

Crystallization kinetics of glass prepared with foundry slag

Model fitted and model free approaches for crystallization kinetics in Se85Te15-xBix glasses

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