Non-linear behavior of Junctionless nanowire transistors operating in the linear regime

The Roles of the Gate Bias, Doping Concentration, Temperature and Geometry on the Harmonic Distortion of Junctionless Nanowire Transistors Operating in the Linear Regime

“…Additionally, the smaller doping concentration presented in the source/drain regions makes the series resistance (R SD ) of JNTs larger than their IM counterparts, improving the harmonic distortion when operating in saturation as amplifiers as stated in [10]. Other recent studies [11][12] have shown the great potential of JNTs for the application as tunable resistors due to its higher total resistance. The current work aims at verifying the influences of the temperature (T), the fin width (W fin ), channel length (L), channel doping concentration (N D ), R SD and V GS on the harmonic distortion of n-type JNTs operating in the linear regime.…”