Non-Linear Coupling Effects in Fully Depleted SOI Transistors

Characteristics and ultra-high total ionizing dose response of 22 nm fully depleted silicon-on-insulator

“…The reason for the dependence of this technology on channel length is not yet fully understood. Some authors have observed greater degradation in the short transistors of certain FDSOI technologies [13,19], but these studies investigate devices with doped channels, thus different from the undoped FDSOI studied in this paper. The TID response of some bulk technologies is dependent on the 𝐿 due to the presence of the spacer oxides [15,20] or the presence of the halo implants in the channel [21].…”

“…In pMOS devices, the charge in the oxide and at the interface has the same sign, causing the monotonic behavior of the radiation response. The radiation response of the 𝑉 th is caused by the charge in the buried oxide which being coupled to the front-gate causes a change in the threshold voltage of the front channel [9][10][11][12][13]. The observed response depends on transistor length, with shorter devices exhibiting a greater variation.…”

“…However, the BOX is typically tens of nanometers thick and therefore trapping significant amounts of charge when exposed to ionizing dose [8]. Total Ionizing Dose (TID) susceptibility of FDSOI devices results mainly from the coupling between the back gate and the front gate, meaning that charges trapped in the BOX modify the electrical characteristics of the transistor [9][10][11][12][13]. Thus, although SOI technologies are appealing in reducing SEE, they may exhibit a greater sensitivity to TID compared to bulk technologies.…”