Non-linear luminescence due to exciton - e-h plasma transformation in mixed type I - type II quantum wells

Manassen, A.; Cohen, E.; Ron, A.; Linder, E.; Pfeiffer, L. N.

doi:10.1006/spmi.1994.1035

Cited by 9 publications

(3 citation statements)

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“…We utilize [8] these properties in order to form a 2DEG with a controlled density in the wide wells by photoexciting with an Ar + laser, E L 2 = 2.41 eV and intensities at the sample surface of 0 ≤ I L 2 ≤ 8 mW cm 2 . In the PL experiments we simultaneously photoexcited the MTQW at E L 2 and just above the (e1: hh1) W 1S exciton band with a Ti:Sapphire laser at an energy of E L 1 = 1.538 eV and with a fixed intensity of I L 1 = 3 W cm 2 (cf.…”

Section: Methodsmentioning

confidence: 99%

Detailed balance between impact ionization and Auger recombination of trions in GaAs/AlAs quantum wells

Manassen

Cohen

Ron

et al. 1998

Superlattices and Microstructures

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Section: Methodsmentioning

confidence: 99%

Detailed balance between impact ionization and Auger recombination of trions in GaAs/AlAs quantum wells

Manassen

Cohen

Ron

et al. 1998

Superlattices and Microstructures

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“…The optical properties of quantum well (QW) structures, containing two-dimensional electron and hole gases (2DEG and 2DHG), have a scientific and technological importance [1,2]. The influence of those gases are studied in mixed types I-II quantum well (MTQW) structures, enabling the control of the electron density (n e ) between 10 10 -10 11 carriers cm −2 by optical pumping [4][5][6][7].…”

Section: Introductionmentioning

confidence: 99%

A study of semiconductor quantum structures by microwave modulated photoluminescence

et al. 2002

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Mixed types I-II multiple quantum well structures consist of alternating narrow and wide GaAs wells (NW and WW), separated by AlAs barriers. The transfer of electrons from the NW to the WW results in the formation of two-dimensional electron and hole gases (2DEG and 2DHG) at the WW and NW, respectively. The present study investigated the influence of the 2DEG and the 2DHG on the optical properties of the materials. The study utilized double beam photoluminescence (PL) and microwave modulated PL, offering high-resolution spectroscopy and control of the density of the gases and their kinetic energy. The results have shown that the existence of the low-density 2DEG in the WW causes the formation of trions or plasma-like recombination. In addition, electrons transfer through the barrier leading to a barrier-NW indirect recombination emission. The latter is influenced by an electrostatic potential induced by the two-dimensional gases.

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“…The influence of those gases are studied in mixed type I-type II quantum wells (MTQW) structure, enabling the control of the electron-density (he) between 1010_ 1011 carriers/cm2 by optical pumping [4][5][6][7].…”

Section: Introductionmentioning

confidence: 99%

A Study of Semiconductor Quantum Structures by Microwave Modulated Photolumenescence

et al. 1999

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Abstract. Mixed types I-type II multiple quantum wells structures consist of alternating narrowand wide GaAs wells (WW and NW), separated by AlAs barriers. Transfer of electrons from the narrow-to the wide well results in the formation of two-dimensional electron and hole gases (2DEG and 2DHG) at the WW and NW, respectively. The present study investigated the influence of the 2DEG and the 2DHG on the optical properties of the materials. The study utilized two modulations techniques: double beam photoluminescence and microwave modulated PL, offering high-resolution spectroscopy, control of the density of the gases and their kinetic energy. The results showed that the existence of the low density 2DEG in the wide well cause the formation of trions or plasma-like recombination. In addition, electrons transfer through the barrier leads to a barrier-NW indirect recombination emission. The latter is influenced by an electrostatic potential induced by the two-dimensional gases.

show abstract

Non-linear luminescence due to exciton - e-h plasma transformation in mixed type I - type II quantum wells

Cited by 9 publications

References 0 publications

Detailed balance between impact ionization and Auger recombination of trions in GaAs/AlAs quantum wells

Detailed balance between impact ionization and Auger recombination of trions in GaAs/AlAs quantum wells

A study of semiconductor quantum structures by microwave modulated photoluminescence

A Study of Semiconductor Quantum Structures by Microwave Modulated Photolumenescence

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