Non-linear optical generation in Ga1−yAlyAs/GaAs/Ga1−xAlxAs quantum V-grooves: The effects of temperature and hydrostatic pressure

Giraldo-Tobón, E.; Miranda, Guillermo L.; Fulla, M.R.

doi:10.1016/j.photonics.2021.100919

Cited by 4 publications

(7 citation statements)

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“…The physical system under consideration corresponds to a conduction-band electron confined into the coupled VGQWs of GaAs due to the energy gap mismatch among the substrate-lower VGQW-barrier and barrier-upper VGQW-cap. An economical and computationally efficient parametrization of a wide variety of VGQW cross-sections extracted from experimental reports [11, 14-17, 20, 22-24] is the one defined by the five-parameter curves [35] representing the GaAs quasi-one-dimensional spaces in Fig. 1 (dark patterned zones):…”

Section: V-groove Stack's Geometrymentioning

confidence: 99%

“…is the effective potential confinement that takes into account the energy gap mismatch through the band off-set alignment factor Q c 0.67 [35].…”

Section: Electronic States Calculationmentioning

confidence: 99%

“…With all the previous elements composing the system Hamiltonian, the eigenvalue problem on the cross-sectional plane Ĥ⊥ ψ( r ⊥ ) E ⊥ ψ( r ⊥ ) can be firstly solved [34,35] with the aim to solve the three-dimensional problem as will be shown later. The cross-sectional problem can be alternatively obtained [41] from the minimization of the functional:…”

Section: Electronic States Calculationmentioning

confidence: 99%

“…Recently, other authors have made important computational efforts to solve the single VGQW problem [19] by using a finite differences method. More recently, an excellent approximation to realistic VGQWs [34,35] by using the finite element method was reported allowing to calculate electronic states [34] and the corresponding nonlinear optical generation [35]. Nevertheless, at this stage, theoretical studies related to vertically stacked V-grooves are really scarce [36].…”

Section: Introductionmentioning

confidence: 99%

“…Nevertheless, at this stage, theoretical studies related to vertically stacked V-grooves are really scarce [36]. In this article, we study some spectral features of two vertically stacked GaAs/Ga 1−x Al x As VGQWs (with the realistic size/shape described in [34,35]) such as the energy level ordering as a function of the VGQW geometry, and the linear, nonlinear, and total optical absorption. These findings can potentially give some hints to optimally tune the optical response of realistic v-groove superlattices or foster the study of the fundamental physics underlying the development of new optical devices [37][38][39].…”

Section: Introductionmentioning

confidence: 99%

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Spectral features and optical absorption of vertically stacked V-groove quantum wires

et al. 2022

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The spectral features and the linear, nonlinear, and total optical absorption coefficients of two realistic $$\mathrm {GaAs/Ga}_{1-x}{\mathrm{Al}}_x{\mathrm{As}}$$ GaAs / Ga 1 - x Al x As vertically stacked V-groove quantum wires confining electronic states were theoretically studied. The compact density matrix formalism and the finite element method were used as solution frameworks. The influence of the barrier width, inter-sidewall angle, the crescent thickness of the stack, and the influence of a static electric field on the energy spectrum and the optical coefficients is addressed. Increasing the crescent thickness (inter-sidewall angle) leads to a reduction (non-monotonous increase) of the energy values, while the presence of a static electric field leads to controllable stark-like patterns. In all cases, anti-crossing points are reported. By increasing the crescent thickness, inter-sidewall angle, or barrier width, a non-monotonous blue-/red-shift of the resonant peaks of the optical absorption is observed. In addition, the results in asymmetric/symmetric vertically coupled V-groove quantum wire systems suggest that the quantum tunneling phenomenon can be linked to the enhancement of the total optical absorption due to the possibility of the generation of dipole moments by higher electron mobility. Thus, optical fields oriented along the growth direction enhance the optical absorption. Furthermore, the absorption coefficient maximum is drastically modified by varying the inter-sidewall angle, and even the evolution tendency can be inverted due to the anti-crossing points in the energy spectra. Since the obtained resonant peaks are located below 20 meV in the spectra, the analyzed system could be interesting for exploring and designing new Terahertz devices.

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Section: V-groove Stack's Geometrymentioning

confidence: 99%

“…is the effective potential confinement that takes into account the energy gap mismatch through the band off-set alignment factor Q c 0.67 [35].…”

Section: Electronic States Calculationmentioning

confidence: 99%

Section: Electronic States Calculationmentioning

confidence: 99%