“…Usually, SbSI is regarded as p -type semiconductor [ 31 , 37 , 61 , 71 , 72 ], whereas both ITO [ 73 ] and TiO 2 [ 74 ] exhibit n -type electrical conductivity. The work functions of ITO, TiO 2 , and SbSI were 4.4–4.5 eV [ 75 ], 4.2–4.7 eV [ 76 ], and 5 eV [ 31 , 71 , 72 ], respectively. Accordingly, since the work function of p -type SbSI is higher than that of n-type ITO and n -type TiO 2 , a built-in electric field was formed in the ITO/SbSI and TiO 2 /SbSI interfaces.…”