2020
DOI: 10.1063/5.0001524
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Non-local photocurrent in a ferroelectric semiconductor SbSI under local photoexcitation

Abstract: We have investigated the photovoltaic action in a ferroelectric semiconductor SbSI with a potentiometry for a multiterminal device under local laser irradiation. The DC-voltage characteristics indicate that the device characteristics are understood to be equivalent to a series circuit composed of dark-resistances for the unirradiated parts and the parallel circuit of a current source and photo-resistance for the irradiated part. The results clearly guide us toward designing photovoltaic and photodetective devi… Show more

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Cited by 10 publications
(9 citation statements)
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“…x = ±200 corresponds to the case in which the light position is at the ends of the chain, and x = 0 is when the light is at the center. Unlike the case in the clean limit (26)(27)(28)35), the current decays when the light position goes away from the two ends. Fig.…”
Section: Resultsmentioning
confidence: 79%
“…x = ±200 corresponds to the case in which the light position is at the ends of the chain, and x = 0 is when the light is at the center. Unlike the case in the clean limit (26)(27)(28)35), the current decays when the light position goes away from the two ends. Fig.…”
Section: Resultsmentioning
confidence: 79%
“…The only positive pyroelectric response of the SbSI–TiO 2 nanogenerator is observed ( Figure 5 b,d) due to the fact that the rectifying p – n heterojunction was formed between the SbSI nanowires and the ITO electrode as well between the SbSI nanowires and the TiO 2 nanoparticles. Usually, SbSI is regarded as p -type semiconductor [ 31 , 37 , 61 , 71 , 72 ], whereas both ITO [ 73 ] and TiO 2 [ 74 ] exhibit n -type electrical conductivity. The work functions of ITO, TiO 2 , and SbSI were 4.4–4.5 eV [ 75 ], 4.2–4.7 eV [ 76 ], and 5 eV [ 31 , 71 , 72 ], respectively.…”
Section: Resultsmentioning
confidence: 99%
“…Usually, SbSI is regarded as p -type semiconductor [ 31 , 37 , 61 , 71 , 72 ], whereas both ITO [ 73 ] and TiO 2 [ 74 ] exhibit n -type electrical conductivity. The work functions of ITO, TiO 2 , and SbSI were 4.4–4.5 eV [ 75 ], 4.2–4.7 eV [ 76 ], and 5 eV [ 31 , 71 , 72 ], respectively. Accordingly, since the work function of p -type SbSI is higher than that of n-type ITO and n -type TiO 2 , a built-in electric field was formed in the ITO/SbSI and TiO 2 /SbSI interfaces.…”
Section: Resultsmentioning
confidence: 99%
“…The suppression of the Ohmic dc current contributes to the efficiency of solar cells by reducing the current back-flow. For instance, a recent work discusses that the shift current device acts as a current source; the output current reads J out = J s R * /(2R 0 + R * ) where R * and R 0 are respectively the resistivity of the photovoltaic device and the leads [29]. The result implies materials with high R * are beneficial for applications.…”
Section: Disussionmentioning
confidence: 99%