2011
DOI: 10.1143/jpsjs.80sa.sa103
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Non-magnetic to Magnetic Transition under High Pressure in Narrow-Gap Semiconductor β-US2

Abstract: We have measured the magnetization of an uranium chalcogenide compound β-US 2 under high pressure by piston cylinder and indenter type cells up to 2.42 GPa in a commercial SQUID magnetometer. The compound is a narrow-gap semiconductor that does not order magnetically down to 0.3 K at 1 bar. The appearance of a pressure-induced phase above 2 GPa was suggested by a previous study with the electrical resistivity measurement under high pressure. In this study, it was found that a ferromagnetic state is induced abo… Show more

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Cited by 6 publications
(7 citation statements)
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“…High-pressure investigations on β-US 2 [6] and UTeS suggest that ferromagnetism is stabilized at high pressures. Although β-US 2 at ambient pressure is a paramagnet, it appears to be located near a ferromagnetic instability.…”
Section: Introductionmentioning
confidence: 97%
“…High-pressure investigations on β-US 2 [6] and UTeS suggest that ferromagnetism is stabilized at high pressures. Although β-US 2 at ambient pressure is a paramagnet, it appears to be located near a ferromagnetic instability.…”
Section: Introductionmentioning
confidence: 97%
“…Previously, we found that the ferromagnetic state is induced in the semiconducting β-US 2 by the application of the pressure above the critical pressure of 0.7 GPa [13]. The pressure-induced ferromagnetic state was discussed in terms of "induced-magnetic moment state" often observed in some praseodymium compounds with the singlet ground state such as Pr 3 Tl [14].…”
Section: Introductionmentioning
confidence: 99%
“…Interestingly, when a strong external field is applied, the semiconducting behavior at low temperatures is completely suppressed [5]. In addition, ferromagnetism is easily induced by a relatively low pressure of about 1 GPa [6]. Consequently, β-US 2 is considered to possess a ferromagnetic instability.…”
Section: Introductionmentioning
confidence: 99%