Non-metal catalytic synthesis of graphene from a polythiophene monolayer on silicon dioxide

Jing, Hongyue; Min, Mi‐Sook; Seo, Sohyeon; Lu, Benzheng; Yoon, Yeoheung; Lee, Sae Mi; Hwang, Eun Young; Lee, Hyoyoung

doi:10.1016/j.carbon.2015.01.044

Cited by 12 publications

(5 citation statements)

References 21 publications

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“…Catalytic growth on the Cu surface relates to the synthesis of mono- to bilayer graphene, , while noncatalytic growth of graphene relates to a graphene growth reaction where carbon atoms exist between the Cu metal and the substrate. As noncatalytic growth of graphene using SAMs was reported earlier, the Cu metal acts not only as a catalyst for surface-mediated graphene growth but also as an encapsulation layer to prevent carbon out-diffusion. We believe that low carbon solubility of Cu may give rise to multilayer graphene growth.…”

Section: Resultsmentioning

confidence: 83%

Transfer-Free Growth of Multilayer Graphene Using Self-Assembled Monolayers

Yang

Kim

Jang

et al. 2016

ACS Appl. Mater. Interfaces

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Large-area graphene needs to be directly synthesized on the desired substrates without using a transfer process so that it can easily be used in industrial applications. However, the development of a direct method for graphene growth on an arbitrary substrate remains challenging. Here, we demonstrate a bottom-up and transfer-free growth method for preparing multilayer graphene using a self-assembled monolayer (trimethoxy phenylsilane) as the carbon source. Graphene was directly grown on various substrates such as SiO/Si, quartz, GaN, and textured Si by a simple thermal annealing process employing catalytic metal encapsulation. To determine the optimal growth conditions, experimental parameters such as the choice of catalytic metal, growth temperatures, and gas flow rate were investigated. The optical transmittance at 550 nm and the sheet resistance of the prepared transfer-free graphene are 84.3% and 3500 Ω/□, respectively. The synthesized graphene samples were fabricated into chemical sensors. High and fast responses to both NO and NH gas molecules were observed. The transfer-free graphene growth method proposed in this study is highly compatible with previously established fabrication systems, thereby opening up new possibilities for using graphene in versatile applications.

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Section: Resultsmentioning

confidence: 83%

Transfer-Free Growth of Multilayer Graphene Using Self-Assembled Monolayers

Yang

Kim

Jang

et al. 2016

ACS Appl. Mater. Interfaces

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“…After the addition of SAM, the silane undergoes reactions such as hydrolysis and dehydration condensation on the substrate. Then, a dense and ordered film is formed. − The optical microscopy images of the samples are in Figure S1. The results of the water contact angle test with and without SAM on the substrate are shown in Figure b–d.…”

Section: Resultsmentioning

confidence: 99%

Enhance Carrier Diffusion of Monolayer MoSe₂ by Interface Engineering

Zhao,

He,

Liu

et al. 2024

ACS Appl. Mater. Interfaces

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Two-dimensional materials hold great potentials for beyond-CMOS (complementary metal−oxide−semiconductor) electronical and optoelectrical applications, and the development of field effect transistors (FET) with excellent performance using such materials is of particular interest. How to improve the performance of devices thus becomes an urgent issue. The performance of FETs depends greatly on the intrinsic electrical properties of the channel materials, meanwhile the device interface quality, such as extrinsic scattering of charged impurities, charge traps, and substrate surface roughness have a great influence on the performance. In this paper, the impact of the interface quality on the carrier diffusion behaviors of monolayer (ML) MoSe 2 has been investigated by using an in situ ultrafast laser technique to avoid the surface contamination during device fabrication process. Two types of selfassembled monolayers (SAMs) are introduced to modify the gate dielectric surface through an interface engineering approach to obtain chemical−stable interfaces. The results showed that the transport properties of ML MoSe 2 were enhanced after interface engineering, for example, the carrier mobility of ML MoSe 2 was improved from ∼59.4 to ∼166.5 cm 2 V −1 s −1 after the SAM modification. Meanwhile, the photocarrier dynamics of ML MoSe 2 before and after interfacial engineering were also carefully studied. Our studies provide a feasible method for improving the carrier diffusion behaviors of such materials, and making them suited for application in future integrated circuit.

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“…In these cases, metal residues always exist in the graphene grown by metal‐assisted approaches. Therefore, researchers have tried to develop various metal‐free growth approaches, including high temperature thermal CVD, [ 363 ] low‐pressure CVD, [ 364 ] pulsed laser deposition, [ 365 ] and SAM, [ 366 ] etc.…”

Section: Conclusion and Challengesmentioning

confidence: 99%

Recent Progress in the Transfer of Graphene Films and Nanostructures

Gao

Chen

et al. 2021

Small Methods

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electronics, [9] photonics, [10,11] biosensors, [12,13] etc.One reason that graphene research has developed so fast is the relatively simple and cheap production procedures. Many production approaches have been established, such as top-down approaches, including: mechanical exfoliation, [14] liquid phase exfoliation, [15] reduction of graphene oxide (GO), [16] and electrochemical exfoliation, [17] etc.; as well as bottomup approaches, including: epitaxial growth on SiC, [18] chemical vapor deposition (CVD), [19] etc. Among these approaches, CVD on metal substrates has been widely used to synthesize high quality, large-area graphene (LAG) films. The production of square meters of graphene has been realized, and the state of art devices have been demonstrated. [20] CVD graphene films are ready for applications like transparent conductive films, [20,21] wearable transparent sensors, [22] and ionic/molecular nanofiltration membrane. [23] Despite graphene's extraordinary electronic properties and fast progress in production, zero bandgap of graphene hinders the application of graphene as an electronic transistor. [24] One solution is to engineer graphene into graphene nanostructures (GNs), e.g., graphene nanoribbons (GNRs), [25] graphene nanomeshes (GNMs), [26] graphene quantum dots (GQDs), [27] and other complex shaped nanostructures. [28] Theory predicted that GNRs' bandgap (ΔE(W)) varies as a function of the ribbon width W, ΔE(W) = α W −1 , α is a coefficient with unit [nm eV]. [29][30][31][32] Contrary to the fixed bandgap of a semiconductor-silicon, the bandgap of GNs can be precisely tuned by regulating their edge structure, shape, size, and crystallographic orientation. [26,[33][34][35] Currently, extremely small and dense graphene based-nanoelectronic devices have been achieved by top-down approaches, e.g., electron-beam lithography, [36] block copolymer lithography, [37] and nanosphere lithography. [38] However, top-down patterning of graphene to nanometer scale is challenging without compromising its transport properties. As the pattern density increases, the introduced edge disorders will gradually dominate the electronic properties. Bottom-up approaches, on the other hand, provide an opportunity to synthesize graphene with well-defined edges via solution-mediated or surface-assisted cyclodehydrogenation reactions. [39,40] Since CVD-grown graphene films and surface-assisted grown GNs are generally synthesized on metal foils, their further applications require post-transfer to target substrates. [12,[41][42][43] The one-atom-thick graphene has excellent electronic, optical, thermal, and mechanical properties. Currently, chemical vapor deposition (CVD) graphene has received a great deal of attention because it provides access to large-area and uniform films with high-quality. This allows the fabrication of graphene based-electronics, sensors, photonics, and optoelectronics for practical applications. Zero bandgap, however, limits the application of a graphene film as electronic transistor. The most commonly u...

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Non-metal catalytic synthesis of graphene from a polythiophene monolayer on silicon dioxide

Cited by 12 publications

References 21 publications

Transfer-Free Growth of Multilayer Graphene Using Self-Assembled Monolayers

Transfer-Free Growth of Multilayer Graphene Using Self-Assembled Monolayers

Enhance Carrier Diffusion of Monolayer MoSe₂ by Interface Engineering

Recent Progress in the Transfer of Graphene Films and Nanostructures

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Non-metal catalytic synthesis of graphene from a polythiophene monolayer on silicon dioxide

Cited by 12 publications

References 21 publications

Transfer-Free Growth of Multilayer Graphene Using Self-Assembled Monolayers

Transfer-Free Growth of Multilayer Graphene Using Self-Assembled Monolayers

Enhance Carrier Diffusion of Monolayer MoSe2 by Interface Engineering

Recent Progress in the Transfer of Graphene Films and Nanostructures

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Enhance Carrier Diffusion of Monolayer MoSe₂ by Interface Engineering