The need for producing high purity materials for semiconducting devices and studies of the electrical properties of metals at low temperatures has hastened the improvement of techniques for providing such materials; probably the biggest step in this direction came from Pfann's work on zone refining in 1952. Conventional gravimetric and spectrographic techniques have, in general, been found inadequate for detecting the minute impurity concentrations in present day high purity materials. Two techniques which have emerged in this new era of impurity detection are radioactive tracer methods and the residual resistance method; the standing of the latter in relation to recent developments involving magnetoresistance and size effects are discussed here.