Non-quasi-static capacitance of p/n junction space-charge regions

Liou, Juin J.

doi:10.1016/0038-1101(88)90088-3

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Cited by 8 publications

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Theoretical Study of Forward-Voltage Heterojunction Space-Charge-Region Capacitance Including Interface-State Effects

Liou

1989

Phys. Stat. Sol. (a)

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The potential barrier heights, thickness, and capacitance of abrupt heterojunction space‐charge regions under forward voltages are treated analytically, and a model for this is developed. Physical effects such as free‐carrier charges and interface states in the heterojunction space‐charge region are considered. Comparison of the present model and other models for a Gaas/Si heterojunction diode is included. Experimental aspects regarding the heterojunction capacitance are also briefly discussed.

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