Non-recombination injection mode

Abstract

A new type of injection regime is considered – non-recombination one, which can be realized in the forward direction of the current in structures of the p-n-n+ type under conditions of opposite directions of ambipolar diffusion and drift of non-equilibrium carriers. This is possible only if the accumulation at the n-n+ junction is stronger than the injection through the p-n junction, i.e., the concentration of carriers at the boundary of the n-base with the n-n+ junction is higher than their concentration at the boundary of the n-base with the p-n junction. In this mode, the dependences of the current on the voltage of the type J ~ V, and then J ~ V2 appear. Experimentally, such a behavior of the current-voltage characteristic is observed for the Al–Al2O3–CdTe structure.

Influence of Doping Conditions on the Properties of Nickel Atom Clusters

“…By studying the various external influences and comparing the works of other authors, we made a conclusion that the sensitivity of the resulting samples demonstrates hundred times more magnitude to radial pressure in compare to results demonstrated by other authors [13][14][15][16][17][18][19][20][21]. And they demonstrate the results that met the parameters we needed.…”