Non-Rutherford 4He cross sections for ion beam analysis

Leavitt, J.A.; McIntyre, L.C.

doi:10.1016/0168-583x(91)95015-6

Cited by 30 publications

(4 citation statements)

References 76 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Measurements were performed at the Centro Nacional de Aceleradores (CNA) using a He + beam at the energy of 4250 KeV. At this energy, the cross section for Cr is "Rutherford" but that for C is "Non-Rutherford" [28] which would allow to have a better accuracy in the determination of the C content in the films. The backscattered ions were detected by a standard Si-barrier detector located at an angle of 165º to the beam direction.…”

Section: Elemental Composition and Structural Characterizationmentioning

confidence: 99%

Tribomechanical properties of hard Cr-doped DLC coatings deposited by low-frequency HiPIMS

Santiago

Fernández-Martínez²,

Sánchez-López

et al. 2020

Surface and Coatings Technology

View full text Add to dashboard Cite

Section: Elemental Composition and Structural Characterizationmentioning

confidence: 99%

Tribomechanical properties of hard Cr-doped DLC coatings deposited by low-frequency HiPIMS

Santiago

Fernández-Martínez²,

Sánchez-López

et al. 2020

Surface and Coatings Technology

View full text Add to dashboard Cite

“…10 Although a boron ridge is not manifestly apparent from the experimental points of Fig. 10 Although a boron ridge is not manifestly apparent from the experimental points of Fig.…”

Section: Results and Analysesmentioning

confidence: 93%

RBS and XPS analyses of phosphor packages for laser-heat thermoluminescence dosimetry

et al. 1991

View full text Add to dashboard Cite

Phosphor packages for a laser-heat thermoluminescence radiation-dosimetry system have been analyzed with Rutherford Backscattering Spectrometry and X-ray Photoelectron Spectroscopy. Samples consist of 20-50 fim diameter powder grains of CaSO 4 : Tm and LiF: (Mg, Ti) phosphor embedded in a transparent silicone matrix about 60 /j,m thick. Our principal finding with regard to layer morphology indicates an inhomogeneous outer layer of areal density at least ~300 jug/cm 2 depleted of phosphor and contaminated with boron.

show abstract

“…For a standard backscattering energy for 4 He of 2 MeV, cross-sections for elements with Z greater than ~6 will be Rutherford, while for 2 MeV protons this value will be Z ~20; for 4 He of 4 MeV energy non-Rutherford behavior will be observed for elements with Z less than ~15. Departure from Rutherford scattering behavior often results in large increases in scattering cross-sections; a good example is the non-Rutherford scattering cross section of 4 He from 16 O for a 4 He energy just above 3 MeV (e.g., Cheng et al 1993;Leavitt and McIntyre 1991;Demarche and Terwagne 2006) where scattering cross-sections are more than an order of magnitude greater than Rutherford values. While these enhanced cross-sections have not yet found significant direct use in diffusion studies in minerals, they have been exploited to supplement other measurements, as in the study of Cherniak (2000), where non-Rutherford a scattering from 28 Si at 6.6 MeV was used to explore substitutional processes involved in REE diffusion in fluorapatite.…”

Section: Depth and Mass Resolutionmentioning

confidence: 99%

Analytical Methods in Diffusion Studies

Cherniak

Hervig

Koepke

et al. 2010

Reviews in Mineralogy and Geochemistry

View full text Add to dashboard Cite

In this chapter, we provide an overview of analytical methods used in diffusion studies. These methods fall into two broad categories-direct profiling and bulk release/exchange. Direct profiling methods, where the concentration of diffusant vs. depth is determined, can employ a variety of techniques, and can access diffusivities ranging from ~10 −9 to 10 −24 m 2 /s. Among these methods are the "classical" techniques of serial sectioning and autoradiography, which, despite a long history of application in diffusion studies, are now rarely used, having been superseded by other analytical methods with better depth resolution and greater flexibility. Direct profiling can also be subdivided into methods involving step-scanning, with measurements made by stepping across a sample cut normal to the diffusion interface, and depth profiling, where analyses are performed parallel to the diffusion direction. Step-scanning may be used in cases where diffusion profiles are at least many tens of micrometers long, as it is limited by the beam spot size (typically ≥ 2 mm; although transmission electron microscopes have much better spatial resolution, they are not used extensively in diffusion studies dues to the difficulties in sample preparation) of the analytical tool used and the minimum number of points necessary to define the diffusion profile. The electron microprobe is used for diffusion measurements by step-scanning, as is the ion microprobe (Secondary Ion Mass Spectrometry, SIMS), and IR spectroscopy. SIMS instruments can also be used in depth profiling mode when smaller diffusion distances are measured. The accelerator-based ion beam techniques Rutherford Backscattering Spectrometry (RBS), Nuclear Reaction Analysis (NRA) and Elastic Recoil Detection (ERD) are also applied in measuring short diffusion distances. This group of techniques is capable of high depth resolution (~10 to a several tens of nm) and thus can be used

show abstract

Non-Rutherford 4He cross sections for ion beam analysis

Cited by 30 publications

References 76 publications

Tribomechanical properties of hard Cr-doped DLC coatings deposited by low-frequency HiPIMS

Tribomechanical properties of hard Cr-doped DLC coatings deposited by low-frequency HiPIMS

RBS and XPS analyses of phosphor packages for laser-heat thermoluminescence dosimetry

Analytical Methods in Diffusion Studies

Contact Info

Product

Resources

About