Non-volatile electric field-mediated magnetic anisotropy in CoZr/ PMN-PT structure

Abstract

Introduction: Although electric field mediated the magnetic anisotropy in ferromagnetic/ferroelectric structure have an intense report, the angle between the magnetic uniaxial anisotropy and strain anisotropy influencing the rearrangement of the magnetic moment has not well investigated.Methods: Keithley 2410 direct current power supply was used to provide voltage through the Cu wires. Static magnetic properties of CoZr layer were measured through VSM (MicroSense EV9). Dynamic magnetic properties were obtained by FMR (JEOL JES-FA 300 spectrometer, power of 1-mW, X-band at 8.969 GHz).Results and Discussion: Electric field-mediated, room-temperature magnetic anisotropy of CoZr/Pb(Mg1/3Nb2/3)O3–PbTiO3 (PMN–PT) structures, in which easy axis of CoZr layer along either direction of [01-1] or [100] of PMN–PT, was investigated. Measured with vibrating sample magnetometer, for [01-1] easy-axis direction sample, when an electric field was applied, these directions of easy axis and hard axis remains unchanged. However, for [100] easy-axis direction sample, these directions of easy axis and hard axis were changed obviously with applying electric field, attributable to the competition between magnetic uniaxial anisotropy of CoZr layer and piezostrain anisotropy of PMN-PT substrate. Nevertheless, change of the resonance magnetic field with electric field–measured by ferromagnetic resonance–exhibited non-volatile behavior, which possibly indicates magnon-driven magnetoelectric coupling existing in CoZr/PMN–PT structures.

Polarization current effect, strain effect and ferroelectric field effect on electrical transport properties of Eu0.7Sr0.3MnO3/PMN-PT multiferroic heterostructure

“…This indicates that the ferroelectric field induced carriers do not significantly influence the photoresistance of the ESMO film, and the photoresistance is tuned by the strain effect. The above experimental results indicate that the tunable Several models have been proposed so far to explain the mechanism of resistive switching, including Mott transition [31,32], Schottky barrier behavior at interfaces [33,34], electric field-induced generation lattice strain [35,36], and oxygen vacancy diffusion [37]. According to our experimental results, in ESMO/PMN-PT heterojunctions, the resistive switching mainly arises from the lattice strain effect and the polarization current effect.…”