Non-Volatile Field-Effect Transistors Enabled by Oxygen Vacancy-Related Dipoles for Memory and Synapse Applications

Peng, Yue; Xiao, Wenwu; Liu, Fenning; Liu, Yan; Han, Genquan; Yang, Nan; Zhong, Ni; Duan, Chun‐Gang; Liu, Chen; Zhou, Yue; Feng, Ze; Dong, Hong

doi:10.1109/ted.2020.3007563

Cited by 17 publications

(13 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However, the high process temperature and undesired gate leakage current along the grain boundaries of polycrystalline ferroelectric materials have restricted their development for the state-of-the-art technology nodes [18][19][20][21][22][23][24][25][26]. Recently, ferroelectricity in the amorphous Al 2 O 3 and ZrO x films enabled by the voltagemodulated oxygen vacancy dipoles has been investigated [27][28][29]. Compared with the crystalline counterpart, the amorphous ferroelectric-like films have significant advantages in reduced process temperature and leakage current.…”

Section: Introductionmentioning

confidence: 99%

“…Compared with the crystalline counterpart, the amorphous ferroelectric-like films have significant advantages in reduced process temperature and leakage current. Thus, there are mass researches on FeFETs with amorphous gate insulator for the non-volatile memory and analog synapse applications [27,[30][31][32][33][34]. However, the systematical investigation on one-transistor ZrO x -based NCFET has not been carried out.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

ZrOx Negative Capacitance Field-Effect Transistor with Sub-60 Subthreshold Swing Behavior

et al. 2021

Self Cite

View full text Add to dashboard Cite

Here we report the ZrOx-based negative capacitance (NC) FETs with 45.06 mV/decade subthreshold swing (SS) under ± 1 V VGS range, which can achieve new opportunities in future voltage-scalable NCFET applications. The ferroelectric-like behavior of the Ge/ZrOx/TaN capacitors is proposed to be originated from the oxygen vacancy dipoles. The NC effect of the amorphous HfO2 and ZrOx films devices can be proved by the sudden drop of gate leakage, the negative differential resistance (NDR) phenomenon, the enhancement of IDS and sub-60 subthreshold swing. 5 nm ZrOx-based NCFETs achieve a clockwise hysteresis of 0.24 V, lower than 60 mV/decade SS and an 12% IDS enhancement compared to the control device without ZrOx. The suppressed NC effect of Al2O3/HfO2 NCFET compared with ZrOx NCFET is related to the partial switching of oxygen vacancy dipoles in the forward sweeping due to negative interfacial dipoles at the Al2O3/HfO2 interface.

show abstract

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

ZrOx Negative Capacitance Field-Effect Transistor with Sub-60 Subthreshold Swing Behavior

et al. 2021

Self Cite

View full text Add to dashboard Cite

show abstract

“…Most recently, extra charge retaining layers were incorporated into normal TFTs to obtain bipolar synaptic spiking behaviors [21], [22]. More importantly, systematic functionalities were also demonstrated on fieldeffect transistor-based synaptic device [23]- [25]. The versatile functionalities and the ability to mass integrate make TFTs idea building blocks for neuromorphic applications.…”

mentioning

confidence: 99%

Sputtered Oxide Thin-Film Transistors With Tunable Synaptic Spiking Behavior at 1 V

Zhang

Cai

et al. 2021

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

Indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) gated with sputtered silicon dioxide dielectric were fabricated. Under different sputtering pressures of silicon dioxide, the device is able to produce transfer curves from clockwise hysteresis to anticlockwise hysteresis, corresponding to different operation modes and thus adding complementary performance by the same material system and device structure. In the interface trapping mode, the transistor exhibited inhibitory synaptic spiking behavior induced by positive stimuli. In the electric doublelayer coupling mode, positive stimuli led to excitatory synaptic spiking behavior, while negative stimuli resulted in inhibitory synaptic spiking behavior. All the transistor and synaptic spiking behaviors are conducted within ±1 V range. Enriched functionality and ultralow operation voltage make sputtered SiO 2 -gated IGZO TFTs promising candidate for neuromorphic applications. Index Terms-1 V, oxide thin-film transistor (TFT), synaptic spiking behavior, synaptic transistor. I. INTRODUCTION T HIN-FILM transistors (TFTs) based on electrolyte gate dielectric have drawn particular attention in recent years, mainly due to their potential neuromorphic applications in brain-inspired computation beyond the traditional von Neumann architecture [1], [2]. Electrolyte is ion-conducting but electron-insulating material. In electrolyte-based TFTs, a positive gate voltage causes ion migration and accumulation at theManuscript

show abstract

“…The process flow in [ 9 ] was used to fabricate the NVFETs with an amorphous HfO 2 gate insulator on 4-inch n-type Ge(001). After the pre-gate cleaning, the substrate was loaded into an atomic layer deposition (ALD) chamber to deposit the HfO 2 at 300 °C.…”

Section: Methodsmentioning

confidence: 99%

“…The mechanism of voltage-modulation of in ferroelectric tunnel junctions was also demonstrated, which improved the tunneling electroresistance ratio of the device [ 12 ]. Compared to the polycrystalline doped-HfO 2 FeFETs, NVFETs with amorphous dielectrics exhibited significantly lower operation voltage and better linearity for multi-threshold voltage operation [ 9 ]. These characteristics make them a promising candidate for low-power neuromorphic devices that closely mimic biological behaviors, which are not to be investigated yet.…”

Section: Introductionmentioning

confidence: 99%

Synaptic Behaviors in Ferroelectric-Like Field-Effect Transistors with Ultrathin Amorphous HfO2 Film

et al. 2022

Self Cite

View full text Add to dashboard Cite

We demonstrate a non-volatile field-effect transistor (NVFET) with a 3-nm amorphous HfO2 dielectric that can simulate the synaptic functions under the difference and repetition of gate voltage (VG) pulses. Under 100 ns write/erase (W/E) pulse, a memory window greater than 0.56 V and cycling endurance above 106 are obtained. The storied information as short-term plasticity (STP) in the device has a spiking post-synaptic drain current (ID) that is a response to the VG input pulse and spontaneous decay of ID. A refractory period after the stimuli is observed, during which the ID hardly varies with the VG well-emulating the bio-synapse behavior. Short-term memory to long-term memory transition, paired-pulse facilitation, and post-tetanic potentiation are realized by adjusting the VG pulse waveform and number. The experimental results indicate that the amorphous HfO2 NVFET is a potential candidate for artificial bio-synapse applications.

show abstract

Non-Volatile Field-Effect Transistors Enabled by Oxygen Vacancy-Related Dipoles for Memory and Synapse Applications

Cited by 17 publications

References 16 publications

ZrOx Negative Capacitance Field-Effect Transistor with Sub-60 Subthreshold Swing Behavior

ZrOx Negative Capacitance Field-Effect Transistor with Sub-60 Subthreshold Swing Behavior

Sputtered Oxide Thin-Film Transistors With Tunable Synaptic Spiking Behavior at 1 V

Synaptic Behaviors in Ferroelectric-Like Field-Effect Transistors with Ultrathin Amorphous HfO2 Film

Contact Info

Product

Resources

About