Non-volatile memory application of glancing angle deposition synthesized Er2O3 capped SnO2 nanostructures

Panigrahy, Sarita; Dhar, Jay Chandra

doi:10.1088/1361-6641/ab7b0b

Cited by 11 publications

(3 citation statements)

References 31 publications

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“…These types of oxides might be utilized in future nonvolatile memory applications. Figure a,b demonstrates the band diagrams indicating the program mode and erase mode, respectively, while Figure c–e represents the relation between threshold voltage versus applied voltage, threshold voltage versus P/E cycles, and threshold voltage versus time (retention) for the Er 2 O 3 -capped SnO 2 NS and bare SnO 2 NWs at room temperature, respectively. Table indicates a few specific rare earth oxides which are utilized in various memory devices.…”

Section: Electronic Devicesmentioning

confidence: 99%

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Recent Progress of Rare Earth Oxides for Sensor, Detector, and Electronic Device Applications: A Review

Hossain

Ahmed

Khan

et al. 2021

ACS Appl. Electron. Mater.

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Rare earth oxides (REOs) are deemed important from both industrial implementation and research insight perspectives. One of the most conspicuous attributes of REOs is sensing, which contributes significantly to the development of diversified and robust systems of sensors and detector devices. However, there has not been any organized review that has pointed out critical insights from the sensor, detector, and electronic device perspectives that can invoke further studies to investigate the prospective and commercially relevant areas to date. To address this limitation, this review undertakes a focused report approach. From this concise yet comprehensive review, it has been prominent that the most significant contributions to the sensing and detecting fields by the REOs are in electrochemical, temperature, humidity, radiation, gas, and biosensors. Moreover, in terms of electronic device development, REOs have had a significant impact on memory devices, metal oxide semiconductors, dielectric materials, capacitors, energy storage devices, and so on. Furthermore, one of the key findings of the study is that the REOs have flexible doping (e.g., Er3+, Yb3+, Y3+, etc.) capability combined with other host materials such as HfO2 film, SiO2 stacks, TiO2, SnO2 nanostructures, etc., which will likely make REO-based electrochemical sensor and biosensor development the most promising sector in the coming years. Despite the impressive aspects, biocompatibility issues in several biological and biomedical systems along with the hygroscopic nature of REOs in electronic devices remain as concerns. However, these issues can be addressed by the advancement of intricate technologies such as targeted manipulation of the electronic configuration of REOs, multifarious doping experiments to obtain alternative mechanisms, etc. to obtain superior biocompatibility, and device development systems that are noninvasive to the environment. From the commercialization front, memory devices and energy storage devices will be the focusing points for large-scale investors due to improved mechanical (i.e., Young’s modulus, intrinsic stress, etc.) and electrical (i.e., high dielectric constant, resistivity, relative permittivity, etc.) properties, while REO-based metal oxide semiconductor and capacitor development is likely to be research-oriented for the next few years before making the eventual move to futuristic applications at a large industrial scale. In short, this review reports a substantial number of relevant studies that will pave the way for further experimental and computational investigations on REOs and their sensor, detector, and electronic device aspects.

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Section: Electronic Devicesmentioning

confidence: 99%

“…The plot of threshold voltage at room temperature with respect to (c) sweeping voltage (both for Er 2 O 3 -capped SnO 2 nanostructure and bare SnO 2 NWs), (d) P/E cycles (endurance), and (e) time (retention). Reproduced with permission from ref . Copyright 2020 IOP Publishing Ltd.…”

Section: Electronic Devicesmentioning

confidence: 99%

Recent Progress of Rare Earth Oxides for Sensor, Detector, and Electronic Device Applications: A Review

Hossain

Ahmed

Khan

et al. 2021

ACS Appl. Electron. Mater.

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“…Hence, SnO 2 is found to be an appealing contender for upcoming non-volatile memory equipment. 30 Moreover, recent studies have indicated that SnO 2 is capable of demonstrating threshold-switching phenomena. 31 The phenomenon of threshold switching refers to the rapid transition of a material from high resistance state (HRS) to a low resistance state (LRS) upon the attainment of a speci c threshold voltage.…”

Section: Introductionmentioning

confidence: 99%

Resistive Switching Transparent SnO2 Thin Film Sensitive to Light and Humidity

Kalateh,

Jalali,

Ashtiani

et al. 2023

Preprint

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Designing and manufacturing memristor devices with simple and cheap methods is very promising for its development. Here, an Ag/SnO2 /FTO(F-SnO2) structure is used through the deposition of the SnO2 layer attained by its sol via the air-brush method on an FTO substrate. This structure was investigated in terms of the memristive characteristics. The Negative differential resistance(NDR) effect was also observed in environment humidity conditions. In this structure, we have valance change memory (VCM) and electrometalization change memory (ECM) mechanisms that cause the current peak in the NDR region by forming an OH− conductive filament(CF). In addition, the photoconductivity effect has been found under light illumination and this structure shows the positive photoconductance (PPC) effect by increasing the conductivity. This effect has the highest value at wavelengths close to the absorption wavelength of SnO2 (~ 340 nm). Also, the device was examined for up to 100 cycles and significant stability was observed. This behavior is a valuable advantage because the stability of memristors is critical for their use in neuromorphic computing. The coexistence of the NDR effect and resistive switching (RS) memory behavior is useful for achieving high-level simulations of biomimetic or neuromorphic computing. This combination can lead to the creation of artificial synapses that can mimic the behavior of biological synapses.

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Ag nanoparticles capped TiO2 nanowires array based capacitive memory

Pandey

Deb

Dhar

2021

J Mater Sci: Mater Electron

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Glancing angle deposition technique was used to fabricate Ag nanoparticles (NPs) capped TiO 2 Nanowire (NW) array structure for capacitive memory application. Electron microscopes confirmed the sandwiched structure of Ag NPs between TiO 2 thin-film (TF) and NW. The average length of the vertical TiO 2 NW and diameter of Ag NPs (with density ~10 12 cm 2 ) were found to be ~ 350 nm ±5 nm and ~3.2 nm ± 0.4 nm, respectively. An enhanced photoluminescence was observed in case of Ag NPs capped TiO 2 NWs due to the presence of high carriers as compared to bare TiO 2 NW. The capacitance (C) -voltage (V) hysteresis was measured for both Ag NPs capped TiO 2 NW and bare TiO 2 NW at different sweeping voltage (±3V to ±10 V) at 1 MHz frequency. A high capacitive memory window of 7.12 V was obtained for Ag NP capped TiO 2 NW at ±10 V with an excellent endurance upto 1000 cycle. Significantly lesser charge loss of 23% was obtained after a span of 10 4 s with a hole and electron loss of 10.6% and 17.8% respectively. The program and erase process in the device was explained with the help of a band diagram.

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Non-volatile memory application of glancing angle deposition synthesized Er₂O₃ capped SnO₂ nanostructures

Cited by 11 publications

References 31 publications

Recent Progress of Rare Earth Oxides for Sensor, Detector, and Electronic Device Applications: A Review

Recent Progress of Rare Earth Oxides for Sensor, Detector, and Electronic Device Applications: A Review

Resistive Switching Transparent SnO2 Thin Film Sensitive to Light and Humidity

Ag nanoparticles capped TiO2 nanowires array based capacitive memory

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