Non‐Volatile Optical Switch Element Enabled by Low‐Loss Phase Change Material

Yang, Xiahua; Lu, Liangjun; Li, Y; Wu, Yue; Li, Ziquan; Chen, Jianping; Zhou, Linjie

doi:10.1002/adfm.202304601

Cited by 24 publications

(5 citation statements)

References 46 publications

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“…As non-volatile phase shifters, they can sustain their state without any static power consumption. But they suffer from IL and significant dynamic power consumption 82,83 , rendering them suited to only selected applications where sporadic phase shift is needed. MEMS/NOEMS-based phase shifters are inherently low power 84 , and have been demonstrated with multiple foundries 35,85,86 .…”

Section: E/o Modulationmentioning

confidence: 99%

Roadmapping the next generation of silicon photonics

Shekhar,

Bogaerts,

Chrostowski

et al. 2024

Nat Commun

114

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Silicon photonics has developed into a mainstream technology driven by advances in optical communications. The current generation has led to a proliferation of integrated photonic devices from thousands to millions-mainly in the form of communication transceivers for data centers. Products in many exciting applications, such as sensing and computing, are around the corner. What will it take to increase the proliferation of silicon photonics from millions to billions of units shipped? What will the next generation of silicon photonics look like? What are the common threads in the integration and fabrication bottlenecks that silicon photonic applications face, and which emerging technologies can solve them? This perspective article is an attempt to answer such questions. We chart the generational trends in silicon photonics technology, drawing parallels from the generational definitions of CMOS technology. We identify the crucial challenges that must be solved to make giant strides in CMOS-foundry-compatible devices, circuits, integration, and packaging. We identify challenges critical to the next generation of systems and applications—in communication, signal processing, and sensing. By identifying and summarizing such challenges and opportunities, we aim to stimulate further research on devices, circuits, and systems for the silicon photonics ecosystem.

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Section: E/o Modulationmentioning

confidence: 99%

Roadmapping the next generation of silicon photonics

Shekhar,

Bogaerts,

Chrostowski

et al. 2024

Nat Commun

114

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“…Nonvolatile actuation, where a change in state can persist in the absence of an applied signal, is being researched, and has been implemented using electro-optic devices, [1][2][3][4][5][6] latched micro-electromechanical structures, [7][8][9] ferroelectric materials, 10,11 and phasechange materials. [12][13][14][15] Of these, only the latter has demonstrated optically-written, multilevel, and non-volatile actuation. This has been achieved with amplitude modulation 16 and more recently with phase modulation.…”

Section: Introductionmentioning

confidence: 99%

Nonvolatile actuation of a slot microring resonator through photochromic molecular infiltration

Bilodeau,

Doris,

Wisch

et al. 2024

Machine Learning in Photonics

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In this talk, we report resonance tuning of a silicon nitride microring resonator structure using photochromic molecules. A slot waveguide structure and back-end compatible light molecule evaporation are used to enhance interaction of the molecules and optical mode. The device is interrogated in the optical C-band where the molecules exhibit low optical loss, but where a change in refractive index is present. Under UV illumination the resonance is observed to redshift, while under visible illumination the resonance blueshifts. Furthermore, the observed index shift is seen to be non-volatile. This constitutes a new way to optically reversibly trim and reconfigure high index contrast photonic integrated circuits for which a plethora of applications have been investigated recently.

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“…Chalcogenide phase change materials, such as an example, can be directly deposited on silicon and have attracted signi cant attention thanks to their nonvolatile properties [17][18][19][20] , making them promising candidates for compact (~ 10 µm) and zero-static power photonic devices. In the past decades, a plethora of PCM-integrated recon gurable photonic devices have been extensively developed for intensity modulation [21][22][23][24][25][26][27][28][29] , phase tuning [30][31][32][33] , and light path switching 34,35 . Moreover, they play a crucial role in constructing photonic networks and serve as essential elements for optical storage 36 , inmemory computing 37 , and analog optical computing 38,39 .…”

Section: Introductionmentioning

confidence: 99%

“Zero change” platform for monolithic back-end-of-line integration of phase change materials in silicon photonics

Lin,

Wei,

et al. 2023

Preprint

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Monolithic integration of novel materials for unprecedented device functions without modifying the existing photonic component library is the key to advancing heterogeneous silicon photonic integrated circuits. To achieve this, the introduction of a silicon nitride etching stop layer at selective area, coupled with low-loss oxide trench to waveguide surface, enables the incorporation of various functional materials without disrupting the reliability of foundry-verified devices. As an illustration, two distinct chalcogenide phase change materials (PCM) with remarkable nonvolatile modulation capabilities, namely Sb2Se3 and Ge2Sb2Se4Te1, were monolithic back-end-of-line integrated into silicon photonics. The PCM enables compact phase and intensity tuning units with zero-static power consumption. Taking advantage of these building blocks, the phase error of a push-pull Mach-Zehnder interferometer optical switch could be trimmed by a nonvolatile phase shifter with a 48% peak power consumption reduction. Mirco-ring filters with a rejection ratio >25dB could be applied for >5-bit wavelength selective intensity modulation, and waveguide-based >7-bit intensity-modulation photonic attenuators could achieve >39dB broadband attenuation. The advanced “Zero change” back-end-of-line integration platform could not only facilitate the integration of PCMs for integrated reconfigurable photonics but also open up the possibilities for integrating other excellent optoelectronic materials in the future silicon photonic process design kits.

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Non‐Volatile Optical Switch Element Enabled by Low‐Loss Phase Change Material

Cited by 24 publications

References 46 publications

Roadmapping the next generation of silicon photonics

Roadmapping the next generation of silicon photonics

Nonvolatile actuation of a slot microring resonator through photochromic molecular infiltration

“Zero change” platform for monolithic back-end-of-line integration of phase change materials in silicon photonics

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