Non-volatile reconfigurable spin logic device: parallel operations

Abstract

A new proposal is given for designing a non-volatile, completely spin logic device, that can be reprogrammed for different functional classical logical operations. We use the concept of bias driven spin dependent circular current and current induced magnetic field in a quantum ring under asymmetric ring-to-electrode interface configuration to implement all the Boolean operations. We extend our idea to build two kinds of parallel computing architectures for getting parallelized operations, all at a particular time. For one case, different kinds of parallel operations are performed in a single device, whereas in the other type all the possible inputs of a logic gate are processed in parallel and all the outputs are read simultaneously. The performance and reliability are investigated in terms of power, delay and power-delay-product and finally the system temperature. We find that both the individual and simultaneous logic operations studied here are much superior compared to the operations performed in different conventional logic families like complementary metal oxide semiconductor logic, transistor-transistor logic, etc. The key advantage is that we can perform several logic operations, as many as we wish, repeating the same or different logic gates using a single setup, which indeed reduces wiring in the circuits and hence consumes much less power. Our analysis can be utilized to design optimized logic circuits an nano-scale level.

Effect of spin–orbit interaction on circular current: pure spin current phenomena within a ring conductor

“…Depending on the voltage bias, circular current may rise to a very high value compared to the overall drain current (∼10 3 times larger) at the outgoing leads. This giant circular current induces a large magnetic field (in some cases it may even reach to few millitesla or even Tesla) at the center of the ring, which is very important in the context of local spin regulation and several other electronic and spintronic applications like storage of data, logic functions, spin switching, spin-selective electron transmission, spin-based quantum computations, etc [22][23][24][25][26].…”

Effect of spin-orbit interaction on circular current: Pure spin current phenomena within a ring conductor

“…Depending on the voltage bias, circular current may rise to a very high value compared to the overall drain current (∼ 10 3 times larger) at the outgoing leads. This giant circular current induces a large magnetic field (in some cases it may even reach to few millitesla or even Tesla) at the center of the ring, which is very important in the context of local spin regulation and several other electronic and spintronic applications like storage of data, logic functions, spin switching, spin-selective electron transmission, spinbased quantum computations, etc [22][23][24][25][26] .…”

Spin Half‐Adder

“…As the Boolean operation is based on the manipulation of local spin by means of circular current, this device is expected to has negligible power consumption and delay time, [26] and very high endurance (>10 15 cycle) which exceeds the requirements of various memory-use cases, including high-performance applications such as CPU level-2 and level-3 caches, [27] as we find in the spin-transfer-torque random-access memory (where the local spin is regulated by the spin-polarized current).…”