Non-Volatile Resistive Switching in PtSe<sub>2</sub>-Based Crosspoint Memristors

Braun, Dennis; Lukas, Sebastian; Völkel, Lukas; Hartwig, Oliver; Prechtl, Maximilian; Belete, Melkamu; Kataria, Satender; Wahlbrink, T.; Daus, Alwin; Duesberg, Georg S.; Lemme, Max C.

doi:10.1109/drc55272.2022.9855787

Cited by 2 publications

(2 citation statements)

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“…[3,7] This is ideal to directly integrate PtSe 2 into devices, such as piezoresistive sensors, [1,15,16] photonic circuits, [17][18][19] and memristors. [20] There are still challenges in consistently growing high-quality PtSe 2 films, such as controlling homogeneity, [6,7] layer orientation, [8] continuity, [6,21] and layer thickness. [5,7,22,23] Often, the resulting films are polycrystalline with fused, nanoflake-like domains between 10 and 50 nm and thicknesses between 6 and 8.5 nm.…”

Section: Introductionmentioning

confidence: 99%

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Edge Conductivity in PtSe₂Nanostructures

Kempt,

Kuc,

Brumme

et al. 2023

Small Structures

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PtSe2 is a promising 2D material for nanoelectromechanical sensing and photodetection in the infrared regime. One of its most compelling features is the facile synthesis at temperatures below 500 °C, which is compatible with current back‐end‐of‐line semiconductor processing. However, this process generates polycrystalline thin films with nanoflake‐like domains of 5–100 nm size. To investigate the lateral quantum confinement effect in this size regime, a deep neural network is trained to obtain an interatomic potential at density functional theory accuracy and it is used to model ribbons, surfaces, nanoflakes, and nanoplatelets of PtSe2 with lateral widths between 5 and 15 nm. Which edge terminations are the most stable are determined and evidence is found that the electrical conductivity is localized on the edges for lateral sizes below 10 nm. This suggests that the transport channels in thin films of PtSe2 might be dominated by networks of edges, instead of transport through the layers themselves.

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Section: Introductionmentioning

confidence: 99%

“…[ 3,7 ] This is ideal to directly integrate PtSe 2 into devices, such as piezoresistive sensors, [ 1,15,16 ] photonic circuits, [ 17–19 ] and memristors. [ 20 ]…”

Section: Introductionmentioning

confidence: 99%

Edge Conductivity in PtSe₂Nanostructures

Kempt,

Kuc,

Brumme

et al. 2023

Small Structures

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Fully 2D Materials‐Based Resistive Switching Circuits for Advanced Data Encryption

Han,

Aguirre,

Zhu

et al. 2024

Adv Funct Materials

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Data encryption is an essential building block in modern electronic systems to prevent spying and hacking. Every day more and more objects produce electronic data, and this needs to be encrypted before being transmitted. Hence, designing devices, circuits, and systems for data encryption that can be integrated in all kinds of objects and that consume low amounts of energy is highly necessary. Here, this work reports the fabrication of flexible and transparent electronic circuits consisting of devices that exhibit threshold‐type resistive switching with a high degree of stochasticity. The cycle‐to‐cycle variability of switching voltages and state currents is significant but confined within a well‐defined range, which is consistent across multiple devices. This allows to design an efficient protocol for true random number generation. The circuits are fabricated with only synthetic 2D materials, can be fabricated in a scalable manner, and can be integrated in any object.

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Non-Volatile Resistive Switching in PtSe₂-Based Crosspoint Memristors

Cited by 2 publications

References 4 publications

Edge Conductivity in PtSe₂Nanostructures

Edge Conductivity in PtSe₂Nanostructures

Fully 2D Materials‐Based Resistive Switching Circuits for Advanced Data Encryption

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Non-Volatile Resistive Switching in PtSe2-Based Crosspoint Memristors

Cited by 2 publications

References 4 publications

Edge Conductivity in PtSe2Nanostructures

Edge Conductivity in PtSe2Nanostructures

Fully 2D Materials‐Based Resistive Switching Circuits for Advanced Data Encryption

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Non-Volatile Resistive Switching in PtSe₂-Based Crosspoint Memristors

Edge Conductivity in PtSe₂Nanostructures

Edge Conductivity in PtSe₂Nanostructures