Non-zero-crossing current-voltage hysteresis behavior induced by capacitive effects in bio-memristor

Zhu, Shouhui; Zhou, Guangdong; Yuan, Weiyong; Mao, Shuangsuo; Yang, Feng; Fu, Guoqiang; Sun, Bai

doi:10.1016/j.jcis.2019.10.087

Cited by 45 publications

(45 citation statements)

References 51 publications

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“…There have been some examples of possible data representation used in the literature. One such case was the representation in susceptance and conductance 27 and another is the approach of observing non-zero crossing I–V curves 19 . Both cases suffer from complexity issues and can lead to misrepresentation of raw data by the equipment.…”

Section: Data Representationmentioning

confidence: 99%

“…Most characterization methodologies used for memristive systems are carried out with a Direct Current (DC) source, thus making the detection of capacitance and inductance in these devices unlikely, except by indirect inference 18 , 19 . Furthermore, memristors behave as non-linear electronic devices, with a sensitivity to high voltages, which oftentimes leads to catastrophic failure if not mediated 20 .…”

Section: Introductionmentioning

confidence: 99%

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Technology agnostic frequency characterization methodology for memristors

Manouras

Stathopoulos

Serb

et al. 2021

Sci Rep

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Over the past decade, memristors have been extensively studied for a number of applications, almost exclusively with DC characterization techniques. Studies of memristors in AC circuits are sparse, with only a few examples found in the literature, and characterization methods with an AC input are also sparingly used. However, publications concerning the usage of memristors in this working regime are currently on the rise. Here we propose a "technology agnostic" methodology for memristor testing in certain frequency bands. A measurement process is initially proposed, with specific instructions on sample preparation, followed by an equipment calibration and measurement protocol. This article is structured in a way which aims to facilitate the usage of any available measurement equipment and it can be applied on any type of memristive technology. The second half of this work is centered around the representation of data received from following this process. Bode plot and Nyquist plot representations are considered and the information received from them is evaluated. Finally, examples of expected behaviors are given, characterizing simulated scenarios which represent different internal device models and different switching behaviors, such as capacitive or inductive switching. This study aims at providing a cohesive way for memristor characterization, to be used as a good starting point for frequency applications, and for understanding physical processes inside the devices, by streamlining the measuring process and providing a frame in which data representation and comparison will be facilitated.

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Section: Data Representationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Technology agnostic frequency characterization methodology for memristors

Manouras

Stathopoulos

Serb

et al. 2021

Sci Rep

View full text Add to dashboard Cite

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“…This is the first report on free‐standing carbon based memristive devices. The GO active layer on combining with rGO inside memristive architecture showed a complementary switching behavior with good endurance and retention properties while combining with MXene, presenting a capacitive behavior during RS mode observed in a few studies related to biomemristors [ 48,49 ] which provides new outcome toward the future flexile electronics.…”

Section: Introductionmentioning

confidence: 99%

Graphene and MXene Based Free‐Standing Carbon Memristors for Flexible 2D Memory Applications

Fatima

Mohammad

et al. 2021

Adv Elect Materials

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2D carbon materials are examined extensively by virtue of having functional‐groups richness and adaptable interlayer spacing with exquisite electrochemical characteristics and flexibility. The phenomenal character of these materials enables them to be resilient in building memristive flexible electronics. The present work reports on a facile, inexpensive fabrication scheme of free‐standing memory devices based on graphene and MXene, exhibiting complementary and capacitive resistive switching (RS) mechanisms for a retention time of 104 s with higher durability for >2400 cycles. The complementary RS in the single trilayer reduced graphene oxide/graphene oxide/reduced graphene oxide (rGO/GO/rGO) carbon cell helps in reducing fabrication complexity with its direct integration in crossbar arrays. While the observed capacitive switching enables MXene paper/graphene oxide paper/MXene paper (M/GO/M) memory device ensemble to retain combine capacitive as well as switching properties for designing self‐generating memory frameworks, sustaining a continuous current even when the external applied bias is removed. The present work will pave pathways for carbon memristors as considerably competent candidates toward designing high performance flexible non‐volatile memory architectures.

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“…Thus, biomaterials have been increasingly studied by researchers for the preparation of electronic skins [ 25 ], organic transistors [ 26 ], artificial synapses and neurons [ 27 , 28 , 29 ], etc. In particular, biomaterials based on proteins [ 30 , 31 , 32 , 33 ], DNA [ 34 , 35 , 36 ], RNA [ 37 ], carbohydrates [ 38 ], etc., have been used as active layer materials for RRAM. RRAM based on an egg albumen film has been shown to have obvious bipolar resistive switching characteristics [ 39 ].…”

Section: Introductionmentioning

confidence: 99%

Flexible Nonvolatile Bioresistive Random Access Memory with an Adjustable Memory Mode Capable of Realizing Logic Functions

2021

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In this study, a flexible bioresistive memory with an aluminum/tussah hemolymph/indium tin oxide/polyethylene terephthalate structure is fabricated by using a natural biological material, tussah hemolymph (TH), as the active layer. When different compliance currents (Icc) are applied to the device, it exhibits different resistance characteristics. When 1 mA is applied in the positive voltage range and 100 mA is applied in the negative voltage range, the device exhibits bipolar resistive switching behavior. Additionally, when 1 mA is applied in both the positive- and negative-voltage ranges, the device exhibits write-once-read-many-times (WORM) characteristics. The device has good endurance, with a retention time exceeding 104 s. After 104 bending cycles, the electrical characteristics remain constant. This memory device can be applied for “AND” and “OR” logic operations in programmable logic circuits. The prepared flexible and transparent biomemristor made of pure natural TH provides a promising new approach for realizing environmentally friendly and biocompatible flexible memory, nerve synapses, and wearable electronic devices.

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Non-zero-crossing current-voltage hysteresis behavior induced by capacitive effects in bio-memristor

Cited by 45 publications

References 51 publications

Technology agnostic frequency characterization methodology for memristors

Technology agnostic frequency characterization methodology for memristors

Graphene and MXene Based Free‐Standing Carbon Memristors for Flexible 2D Memory Applications

Flexible Nonvolatile Bioresistive Random Access Memory with an Adjustable Memory Mode Capable of Realizing Logic Functions

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