The spin torque diode effect in all metal spintronic devices has been proposed as a microwave detector with a high power limit and resistivity to breakdown. The previous works have revealed the field-angle dependence of the rectified DC voltage (V DC) in the ferromagnetic stripe. The giant magnetoresistive (GMR) microstripe exhibits higher sensitivity compared with the ferromagnetic stripe. However, the influence of the magnetic field direction and bias current in the spin rectification of GMR microstripe is not yet reported. In this work, the angular dependence and bias dependence of resonant frequency (f R) and V DC are investigated. A macrospin model concerning the contribution of magnetic field, shape anisotropy, and unidirectional anisotropy is engaged to interpret the experimental data. f R exhibits a jsin d H j dependence on the in-plane field angle (d H). V DC presents either jsin d H j or jsin2 d H cos d H j relation, depending on the magnitude of H ext. Optimized V DC of 24 lV is achieved under 4 mT magnetic field applied at d H ¼ 170. Under out-of-plane magnetic field, f R shows a cos 2h H reliance on the polar angle (h H), whereas V DC is sin h H dependent. The Oersted field of the DC bias current (I DC) modifies the effective field, resulting in shifted f R. Enhanced V DC with increasing I DC is attributed to the elevated contribution of spin-transfer torque. Maximum V DC of 35.2 lV is achieved, corresponding to 47% increase compared with the optimized value under zero bias. Higher I DC also results in enlarged damping parameter in the free layer, resulting in increased linewidth in the spin torque diode spectra. This work experimentally and analytically reveals the angular dependence of f R and V DC in the GMR microstripe. The results further demonstrate a highly tunable f R and optimized V DC by bias current without the external magnetic field. GMR microstripe holds promise for application as a high-power, frequency-tunable microwave detector that works under small or zero magnetic field.