A great
number of chemical and mechanical phenomena,
ranging from
catalysis to friction, are dictated by the atomic-scale structure
and properties of material surfaces. Yet, the principal tools utilized
to characterize surfaces at the atomic level rely on strict environmental
conditions such as ultrahigh vacuum and low temperature. Results obtained
under such well-controlled, pristine conditions bear little relevance
to the great majority of processes and applications that often occur
under ambient conditions. Here, we report true atomic-resolution
surface imaging via conductive atomic force microscopy (C-AFM) under
ambient conditions, performed at high scanning speeds. Our approach
delivers atomic-resolution maps on a variety of material surfaces
that comprise defects including single atomic vacancies. We hypothesize
that atomic resolution can be enabled by either a confined, electrically
conductive pathway or an individual, atomically sharp asperity at
the tip–sample contact. Using our method, we report the capability
of in situ charge state manipulation of defects on
MoS2 and the observation of an exotic electronic effect:
room-temperature charge ordering in a thin transitionmetal carbide
(TMC) crystal (i.e., an MXene), α-Mo2C. Our findings
demonstrate that C-AFM can be utilized as a powerful tool for atomic-resolution
imaging and manipulation of surface structure and electronics under
ambient conditions, with wide-ranging applicability.